2SC1815H

2SC1815 Silicon Epitaxial Planar Transistor FEATURES High voltage and high current z SOT-23 A VCEO=50V(Min),IC=150mA(Max). E Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA z K hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) B J D APPLICATIONS G Audio frequency general purpose amplifier applications. z Max 2.70 3.10 B 1.10 1.50 D Complementary to 2SA1015. z Min A C Low noise. z Dim ORDERING INFORMATION Type No. H 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J C 1.0 Typical K 0.1 Typical 2.20 2.60 All Dimensions in mm Marking 2SC1815 Package Code HF SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA IB Base Current 50 mA PC Collector Dissipation 400 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IC=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Collector cut-off current ICEO VCE=50V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=2mA 130 VCE=6V,IC=150mA 25 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA Transition frequency fT VCE=10V, IC= 1mA f=30MHz CLASSIFICATION OF TYP MAX UNIT 400 100 0.1 0.25 V 1 V 80 MHz hFE(1) Rank L H Range 130-200 200-400 ht t p : // Revision:20170701-P1 MIN www.lgesemi .c o m mail:lge@lgesemi.com 2SC1815 Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Device Package Shipping 2SC1815 SOT-23 3000/Tape&Reel ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com