1N5388B

1N5333B-1N5388B Zener Diode POWER DISSIPATION: 5.0 W DO-15 Features Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "B" for ±5% tolerance. other zener voltage and tolerances are available upon request. Mechanical Data Case:DO-15 Polarity: cathode Band Dimensions in inches and (millimeters) Marking: type number Approx. weight: 0.40grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SYMBOL VALUE UNIT DC pow er dissipation @ TL=75, measure at zero lead length (Fig.1) derate above 75 (NOTE 1) PD 5.0 40.0 W mW Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated load (JEDEC Method)(NOTE 1,2) IFSM see fig.5 A Junction temperature TJ -55---+150 Storage temperature range Ts -55---+150 Zener current (see Table "Characteristics") NOTES: (1) Mounted on 8.0mm2 copper pads to each terminal. (2) 8.3ms single half sine-wav e, or equiv alent square wav e, duty cy cle=4 pulses per minute maximum. Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com 1N5333B-1N5388B Zener Diode ELECTRICAL CHARACTERISTICS Type (Note 1) (T A=25℃) Maximum Zener Impedance (Note 2) Zener voltage (Note 2) Max Reverse Leakage Current IR VR IZM IR VZ (Note 3) (Note 4) (Note 5) A V mA VZ@IZT V IZT mA ZZT@IZT Ω ZZT@IZK =1µA Ω µA V 1N5333B 3.3 380 3.0 400 300 1.0 20 0.85 1440 1N5334B 3.6 350 2.5 500 150 1.0 18.7 0.80 1320 1N5335B 3.9 320 2.0 500 50 1.0 17.6 0.54 1220 1N5336B 4.3 290 2.0 500 10 1.0 16.4 0.49 1100 1N5337B 4.7 260 2.0 450 5.0 1.0 15.3 0.44 1010 1N5338B 5.1 240 1.5 400 1.0 1.0 14.4 0.39 930 1N5339B 5.6 220 1.0 400 1.0 2.0 13.4 0.25 865 1N5340B 6.0 200 1.0 300 1.0 3.0 12.7 0.19 790 1N5341B 6.2 200 1.0 200 1.0 3.0 12.4 0.10 765 1N5342B 6.8 175 1.0 200 10 5.2 11.5 0.15 700 1N5343B 7.5 175 1.5 200 10 5.7 10.7 0.15 630 1N5344B 8.2 150 1.5 200 10 6.2 10.0 0.20 580 1N5345B 8.7 150 2.0 200 10 6.6 9.5 0.20 545 1N5346B 9.1 150 2.0 150 7.5 6.9 9.2 0.22 520 1N5347B 10 125 2.0 125 5.0 7.6 8.6 0.22 475 1N5348B 11 125 2.5 125 5.0 8.4 8.0 0.25 430 1N5349B 12 100 2.5 125 2.0 9.1 7.5 0.25 395 1N5350B 13 100 2.5 100 1.0 9.9 7.0 0.25 365 1N5351B 14 100 2.5 75 1.0 10.6 6.7 0.25 340 1N5352B 15 75 2.5 75 1.0 11.5 6.3 0.25 315 1N5353B 16 75 2.5 75 1.0 12.2 6.0 0.30 295 1N5354B 17 70 2.5 75 0.5 12.9 5.8 0.35 280 1N5355B 18 65 2.5 75 0.5 13.7 5.5 0.40 264 1N5356B 19 65 3.0 75 0.5 14.4 5.3 0.40 250 1N5357B 20 65 3.0 75 0.5 15.2 5.1 0.40 237 1N5358B 22 50 3.5 75 0.5 16.7 4.7 0.45 216 1N5359B 24 50 3.5 100 0.5 18.2 4.4 0.55 198 1N5360B 25 50 4.0 110 0.5 19.0 4.3 0.55 190 1N5361B 27 50 5.0 120 0.5 20.6 4.1 0.60 176 1N5362B 28 50 6.0 130 0.5 21.2 3.9 0.60 170 1N5363B 30 40 8.0 140 0.5 22.8 3.7 0.60 158 1N5364B 33 40 10 150 0.5 25.1 3.5 0.60 144 1N5365B 36 30 11 160 0.5 27.4 3.5 0.65 132 1N5366B 39 30 14 170 0.5 29.7 3.1 0.65 122 1N5367B 43 30 20 190 0.5 32.7 2.8 0.70 110 1N5368B 47 25 25 210 0.5 35.8 2.7 0.80 100 1N5369B 51 25 27 230 0.5 38.8 2.5 0.90 93 1N5370B 56 20 35 280 0.5 42.6 2.3 1.00 86 1N5371B 60 20 40 350 0.5 45.5 2.2 1.20 79 1N5372B 62 20 42 400 0.5 47.1 2.1 1.35 76 Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com 1N5333B-1N5388B Zener Diode ELECTRICAL CHARACTERISTICS Type (Note 1) Zener voltage (Note 2) VZ@IZT V IZT mA (T A=25℃) Maximum Zener Impedance (Note 2) Max Reverse Leakage Current ZZT@IZT Ω ZZT@IZK =1µA Ω IR VR µA V IZM IR VZ (Note 3) (Note 4) (Note 5) A V mA 1N5373B 68 20 44 500 0.5 51.7 2.0 1.5 70 1N5374B 75 20 45 620 0.5 56.0 1.9 1.6 63 1N5375B 82 15 65 720 0.5 62.2 1.8 1.8 58 1N5376B 87 15 75 760 0.5 66.0 1.7 2.0 54.5 1N5377B 91 15 75 760 0.5 69.2 1.6 2.2 52.5 1N5378B 100 12 90 800 0.5 76.0 1.5 2.5 47.5 1N5379B 110 12 125 1000 0.5 83.6 1.4 2.5 43.0 1N5380B 120 10 170 1150 0.5 91.2 1.3 2.5 39.5 1N5381B 130 10 190 1250 0.5 98.8 1.2 2.5 36.6 1N5382B 140 8.0 230 1500 0.5 106 1.2 2.5 34.0 1N5383B 150 8.0 330 1500 0.5 114 1.1 3.0 31.6 1N5384B 160 8.0 350 1650 0.5 122 1.1 3.0 29.4 1N5385B 170 8.0 380 1750 0.5 129 1.0 3.0 28.0 1N5386B 180 5.0 430 1750 0.5 137 1.0 4.0 26.4 1N5387B 190 5.0 450 1850 0.5 144 0.9 5.0 25.0 1N5388B 200 5.0 480 1850 0.5 152 0.9 5.0 23.6 NOTE: 1.TOLERANCE AND VOLTAGE DESIGNATION-The JEDEC type numbers shown indicate a tolerance of ±10% with guaranteed limits on only Vz, I R, Ir, and VF as shown in the electrical characteristics table. Units with guaranteed limits on all seven parameters are indicated by suffix "B" for ±5% tolerance. 2.ZENER VOLTAGE (Vz) AND IMPEDANCE (ZZT & ZZK) - Test conditions for zener voltage and impedance are as follows;Iz is applied 40±10ms prior to reading. Mounting contacts are located from the inside edge of mounting clips to the body of the diode. 3.SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3ms. The data given in Fig 5. May be used to find the maximum surge current for a quare wave of any pulse width between 1 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 6.8v and 200v zeners, are shown in Fig 6. Mounting contact located as specified in NOTE 3. 4.VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are the made at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40±10ms.Mounting contact located as specified in NOTE 2. 5.MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a 5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual Vzof the device. TL=75℃ at 3/8" maximum from the device body. Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com 1N5333B-1N5388B Zener Diode Ratings And Characteristic Curves θVz TEMPERATURE COEFFICIENT (mv)CJ @IZT FIG.2 -- TEMPERATURE COEFFICIENT RANGE 8 L-LEAD LENGTH TO HEAT SINK 6 AMPERES AVERAGE FORWARD CURRENT FIG.1 --FORWARD DERATING CURVE 4 2 0 0 20 40 60 80 100 120 140 160 180 200 300 200 RANGE 100 50 20 10 5 0 20 10 0 .4 .6 100 120 140 160 180 200 220 240 .8 1 40 20 AMPERES 20 PEAK FORWARD SURGE CURRENT /W) 30 .2 80 FIG.4 -- MAXIMUM NON-REPETITIVE SURGE CURRENT 40 0 60 Vz,ZENER VOLTACE @IZT(VOLTS) FIG.3 -- TYPICAL THERMAL RESISTANCE RESISTANCE ΘJL.JUNCTION-TO-LEAD THERMAL RESISTA AMBIENT TEMPERATURE, 40 10 4 2 1 .4 .2 .1 2 L/LEAD LENGTH TO HEAT SINK(INCH) 4 5 8 10 20 30 40 60 80 100 200 NUMBER OF CYCLES AT 60 Hz Revision:20170701-P1 /W JUNCTION-TO-LEAD ΘJl(1.D)TRANSIENT THERMAL RESISTANCE FIG.5 -- TYPICAL THERMAL RESPONSE 20 10 D=0.5 5 D=0.2 D=0.1 2 D=0.05 1 D=0.01 .5 D=0 .2 .001 .005 .01 ht t p : // .05 .1 .5 TIME SECONDS 1 5 www.lgesem i .c o m 10 20 50 100 mail:lge@lgesemi.com 1N5333B-1N5388B Zener Diode Ratings And Characteristic Curves FIG.7 -- ZENER VOLTAGE VERSUS ZENER CURRENT Vz=6.8 THRU 10 VOLTS FIG.6 -- PEAK SURGE CURRENT VERSUS PULSE WIDTH I r.PEAK SURGE CURRENT(AMPS) 30 Iz,ZENER CURRENT(mA) 20 VZ=6.8V 10 5 2 1 .5 .2 .1 VZ=200V 1 10 100 T=25℃ 1000 Tc=25℃ 100 10 1 .1 1 2 T=25℃ 10 1 20 30 40 50 60 7 8 9 70 100 10 1 .1 80 100 120 140 160 180 200 220 80 Vz,ZENER VOLTAGE(VOLTS) PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG DO-15 3000/AMMO 30000 42X28X31 12.00 10.00 ht t p : // 10 1000 Vz,ZENER VOLTAGE(VOLTS) Revision:20170701-P1 6 FIG.9 -- ZENER VOLTAGE VERSUS ZENER CURRENT Vz=82 THRU 200 VOLTS Iz,ZENER CURRENT(mA) Iz,ZENER CURRENT(mA) 1000 10 5 Vz,ZENER VOLTAGE(VOLTS) FIG.8 -- ZENER VOLTAGE VERSUS ZENER CURRENT Vz=11 THRU 75 VOLTS .1 4 1000 PW,PULSE WIDTH(ms) 100 3 www.lgesem i .c o m mail:lge@lgesemi.com