GBU10M

GBU10A-GBU10M Silicon Bridge Rectifiers GBU FEATURES Dim A Min 22.00 Max 22.40 18.80 B 18.40 C 3.40 3.95 2.50 0.40 3.00 0.60  Ideal for printed circuit board  C1 E F Reliable low cost construction utilizing molded plastic technique F1 1.70 2.30 I1 2.30 2.60 Plastic materrial has U/L flammability classification 94V-O I2 0.95 1.25 K 4.70  Mounting position: Any P  Glass passivated chip junctions  17.00min 5.30 R1.9ypical All Dimensions in mm Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol GBU10A GBU10B GBU10D GBU10G GBU10J GBU10K GBU10M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward Output current IF(AV) 10.0 A IFSM 220 A I²t 9200 A²S @TC=100℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load I²t Rating for fusing @Tj=25℃ Thermal Characteristics Characteristic Symbol Typical junction capacitance per leg (note 3) GBU10A CJ GBU10B GBU10D GBU10G GBU10J 211 GBU10K GBU10M 94 UNITS pF Typical thermal resistance per leg (note 2) RθJA 22 (note 1) RθJC 2.0 TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ Operating junction temperature range Storage temperature range ℃/W Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol GBU10A GBU10B GBU10D GBU10G GBU10J GBU10K GBU10M UNITS Maximum instantaneous forward voltage VF @5.0A 1.0 @10A 1.1 Maximum reverse current @TA=25 ℃ V 5.0 μA IR 500 at rated DC blocking voltage @TA=125℃ NOTE: 1. Unit case mounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm) AI. Plate 2. Units mounted in free air, no heat sink on P.C.B., 0.5x0.5"(12x12mm) copper pads, 0.375"(9.5mm) lead length. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0 volts. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com GBU10A-GBU10M Silicon Bridge Rectifiers CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 GBU10A - GBU10G CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 15 10 5 100 GBU10J - GBU10M RESISTER OR INDUCTIVE LOAD WITH HEATSINK f=1.0MHz Vsig=50mVp-p 0 0 30 60 90 120 CASE TEMPERATURE 10 150 0.1 10 TJ=25°C 0.1 20 40 60 80 100 120 140 10 100 UF1DLW 1 TJ=125°C 10 0.1 0.01 1 Pulse width 0.001 0.3 0.4 0.5 ht t p : // 0.6 0.7 0.8 0.9 1 1.1 1 1.1 1.2 0.1 0.6 0.7 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Revision:20170701-P1 TJ=25°C (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) TJ=125°C 0 100 Fig.4 Typical Forward Characteristics 1000 1 10 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 1 (°C) www.lgesem i .c o m 0.8 0.9 1.2 1.3 FORWARD VOLTAGE (V) mail:lge@lgesemi.com GBU10A-GBU10M Silicon Bridge Rectifiers CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) Fig.5 Maximum Non-repetitive Forward Surge Current 225 200 8.3ms Single Half Sine Wave 175 150 125 100 75 50 25 0 1 100 10 NUMBER OF CYCLES AT 60 Hz Device Package Shipping GBU10A-GBU10M GBU 500 Units/Box ht t p : // Revision:20170701-P1 www.lgesem i .c o m mail:lge@lgesemi.com