DB105

DB101-DB107 SILICON BRIDGE RECTIFIERS DB-1 FEATURES z Rating to 1000V PRVP - + z Surge overload rating to 30 Amperes peak ~ ~ z Ideal for printed circuit board Reliable low cost construction utilizing molded z plastic technique results in inexpensive product Dim Min Max A 8.20 8.60 6.50 B 6.10 C 2.35 2.65 E 0.15 0.35 F 5.40 6.00 I 0.35 0.65 J 8.40 9.00 K 4.80 5.20 7.65 8.15 L All Dimensions in mm z Lead solderable per MIL-STD-202 method 208 z Glass passivated chip junctions z Plastic material has UL flammability classification94V-O Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V RMS Reverse Voltage VRMS 35 75 140 280 420 560 700 V DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward Output current @TA=40℃ IF(AV) 1.0 A IFSM 30 A I²t 3.7 A²S Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load I²t Rating for fusing @Tj=25℃ Thermal Characteristics Characteristic Typical thermal resistance per leg (Note1) Operating junction temperature range Storage temperature range Symbol DB101 DB102 DB103 DB104 R ΘJA 66 R ΘJC 28 R ΘJL 27 DB105 DB106 DB107 UNITS °C/W TJ - 55 ---- + 150 ℃ TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Maximum instantaneous forward voltage at 1.0 A Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ Symbol DB101 DB102 DB103 VF IR DB104 DB105 DB106 DB107 UNITS 1.1 V 5 μA 0.5 mA Note: 1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas Revision:20170701-P1 ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com DB101-DB107 SILICON BRIDGE RECTIFIERS 100 10 TJ=125°C 1 0.1 TJ=25°C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Revision:20170701-P1 Device Package Shipping DB101-DB107 DB-1 50unit/pipe ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com