G6P06

GOFORD G6P06 P-Channel Enhancement Mode Power MOSFET Description The G6P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) Schematic diagram -60V -6A < 96mΩ < 145mΩ l 100% Avalanche Tested l RoHS Compliant Marking and pin assignment Application l Power switch l DC/DC converters SOP-8 Device Package Marking Packaging G6P06 SOP-8 G6P06 4000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -6 A IDM -24 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 4.1 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 30 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1428) GOFORD G6P06 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 uA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.8 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = - 4A -- 58 96 VGS = -4.5V, ID = - 3A -- 72 145 VDS=-5V,ID=-4A 10 -- -- -- 930 -- -- 85 -- -- 35 -- -- 25 -- -- 3 -- -- 7 -- -- 9 -- -- 8 -- -- 28 -- -- 10 -- Static Parameters Forward Transconductance gFS mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -4A, VGS = -10V VDD = -30V, ID = -5A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- -6 A VSD TJ = 25ºC, ISD = -7A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1428) GOFORD G6P06 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1428) GOFORD G6P06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics - ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance（mΩ） -Vgs Gate-Source Voltage（V） Figure 3. Gate Charge VDS=-30V ID=-4A Qg Gate Charge（nC） -ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) -Is, Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1428) GOFORD G6P06 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1428) GOFORD G6P06 SOP-8 Package Information Symbol 　 Dimensions in Millimeters MIN. NOM. MAX. A 5.800 6.000 6.200 A1 4.800 4.900 5.000 B 1.270BSC B1 0.35^8x 0.40^8x 0.45^8x C 3.780 3.880 3.980 C1 -- 0.203 0.253 D 0.050 0.150 0.250 D1 1.350 1.450 1.550 D2 1.500 1.600 1.700 D2 1.500 1.600 1.700 E E1 1.060REF 0.400 F F1 www.gofordsemi.com 0.700 0.100 0.250BSC 2° 4° TEL：0755-29961263 6° FAX:0755-29961466 (A1428)