2302

GOFORD 2302. DESCRIPTION D The 2302. uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S GENERAL FEATURES ● VDSS Schematic diagram RDS(ON) RDS(ON) ID 24 mΩ 20mΩ 4.3 A @4.5V (Typ) @10V (Typ) 20V 3 D 2302. G 1 ● High Power and current handing capability ● Lead free product is acquired 2 S Marking and pin Assignment ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 20 V ±12 V 4.3 A 10 A 1 W -55 To 150 ℃ 125 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 22 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD Gate-Body Leakage Current 2302. IGSS VGS=±10V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5 0.79 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=10V, I D=2.5A - 20 30 mΩ VGS=4.5V, ID=2.9A - 24 35 mΩ VDS=5V,ID=2.9A - 8 - S - 300 - PF - 120 - PF - 80 - PF - 10 15 nS On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=10V,ID=2.9A - 50 85 nS td(off) VGS=4.5V,RGEN=6Ω - 17 45 nS - 10 20 nS - 4.0 10 nC - 0.65 - nC - 1.2 - nC - 0.75 1.2 V - - 2.9 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=2.9A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=2.9A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD 2302. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS ID- Drain Current (A) Figure 6 Drain-Source On-Resistance HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD ID- Drain Current (A) Normalized On-Resistance 2302. TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD ID- Drain Current (A) 2302. Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5