G80N03

GOFORD 80N03 DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent Low gate charge . RDS (ON ) with It can be used in a wide VDS RDS(ON) ID 30V -- 80A Vanety of applications . GENERAL FEATURES � VDS = 30 V, ID = 80 A TO-252-2L top view RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with high EAS � Excellent package for good heat dissipation � Special process technology for high ESD capability Application Ordering Information � Power switching application � Hard Switched and High Frequency Circuits � Uninterruptible Power Supply PART NUMBER 80N03 www.goford.cn TEL：0755-29961099 FAX：0755-29961466 PACKAGE TO-252-2L BRAND OGFD Page 1 GOFORD 80N03 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Symbol Parameter 80N03 Units VDS Drain-to-Source Voltage 30 V Continuous Drain Current 80 Drain Current-Continuous(Tc=100℃) 50 IDM Pulsed Drain Current 170 PD Power Dissipation 60 W VGS Gate-to-Source Voltage ± 20 V EAS Single PulseAvalanche Energy 150 mJ TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ ID A Thermal Resistance Symbol Parameter RθJC Junction-to-Case Min. Typ. Max. Units -- -- 2.5 ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃. OFF Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Voltage 30 -- -- V VGS=0, ID=250µA IGSS Gate-to-Source Forward Leakage -- -- ±100 nA VDS=0V, VGS=±20V IDSS Zero Gate Voltage Drain Current -- -- 1 µA VDS=30V, VGS=0V Breakdown Test Conditions ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gfs www.goford.cn Min. Typ. Max Units Test Conditions -- 4.8 6.0 mΩ VGS=10V,ID=30A Gate Threshold Voltage, Figure 12. 1.0 1.5 3.0 V VDS= VGS, ID=250µA Forward Transconductance 20 --- -- S VDS=10V, ID=24A TEL：0755-29961099 FAX：0755-29961466 Page 2 GOFORD 80N03 Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Ciss Input Capacitance -- 2330 -- Coss Output Capacitance -- 460 -- Crss Reverse Transfer Capacitance -- 230 -- Qg Total Gate Charge -- 51 -- Qgs Gate-to-Source Charge -- 14 -- Qgd Gate-to-Drain (“Miller”) Charge -- 11 -- Units Test Conditions pF VDS=15V,VGS=0V, f=1.0MHZ nC VDS=10V, VGS=10V, ID=30A Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=24A -- -- 1.2 V Diode Forward Current IS -- -- -- 80 A Reverse Recovery Time trr -- 32 50 nS Reverse Recovery Charge Qrr TJ=25℃,IF=80A Di/dt = 100 A/µs -- 12 20 nC Forword Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD Notes: 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤10 sec. 3. Pulse Test:Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. 5. EAS condition: Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω. www.goford.cn TEL：0755-29961099 FAX：0755-29961466 Page 3 GOFORD 80N03 Test circuit 1）EAS test Circuits 2）Gate charge test Circuit: 3）Switch Time Test Circuit： www.goford.cn TEL：0755-29961099 FAX：0755-29961466 Page 4 GOFORD 80N03 ID- Drain Current (A) Normalized On-Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance Normalized Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.goford.cn TEL：0755-29961099 FAX：0755-29961466 Figure 6 Source- Drain Diode Forward Page 5 GOFORD Normalized BVdss C Capacitance (pF) 80N03 TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) BVDSS vs Junction Temperature Figure 9 ID- Drain Current (A) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Safe Operation Area Figure 10 VGS(th) vs Junction Temperatur r(t),Normalized Effective Transient Thermal Impedance Figure 8 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.goford.cn TEL：0755-29961099 FAX：0755-29961466 Page 6