G3035

GOFORD G3035-23 Description D The G3035-23 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. General Features S ● VDSS RDS(ON) RDS(ON) ID 58mΩ 40 mΩ -5 A @ -4.5V(Typ) @ -10V (Typ) -30V Schematic diagram ● High power and current handing capability ● Lead free product is acquired Marking and pin assignment ● Surface mount package Application ● PWM applications ● Load switch ● Power management SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -5 A IDM -20 A PD 1.2 W TJ,TSTG -55 To 150 ℃ RθJA 90 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 - - V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - - -1 μA Off Characteristics HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD G3035-23 Parameter Symbol Condition Min Typ Max Unit IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.55 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-1A - 40 55 mΩ VGS=-4.5V, ID=-1A - 58 85 mΩ VDS=-5V,ID=-4.1A 5.5 - - S - 650 - PF - 105 - PF - 65 - PF - 8.5 - nS Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=-15V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V,RL=3.6Ω - 4.5 - nS td(off) VGS=-10V,RGEN=3Ω - 26 - nS Turn-Off Delay Time Turn-Off Fall Time tf - 12.5 - nS Total Gate Charge Qg - 12.5 - nC Gate-Source Charge Qgs - 2.8 - nC Gate-Drain Charge Qgd - 2.7 - nC - - -1.2 V VDS=-15V,ID=-4A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD G3035-23 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics ID- Drain Current (A) Figure 6 Drain-Source On-Resistance HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD ID- Drain Current (A) Normalized On-Resistance G3035-23 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD ID- Drain Current (A) G3035-23 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5