G6N02L

GOFORD G6N02L N-Channel Trench MOSFET Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 100% Avalanche Tested RoHS Compliant Schematic diagram 20V 6A < 11.3mΩ < 14.1mΩ G6N02 Marking and pin assignment Application ⚫ Power switch ⚫ DC/DC converters SOT-23-3L Device Package Marking Packaging G6N02L SOT-23-3L G6N02 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 20 V ID 6 A IDM 24 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.8 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 80 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G6N02L Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 0.7 0.9 V VGS = 4.5V, ID = 3A -- 10 11.3 Drain-Source On-Resistance RDS(on) VGS = 2.5V, ID = 3A -- 12 14.1 VDS=5V,ID=6A -- 50 -- -- 1140 -- -- 165 -- -- 110 -- -- 12.5 -- -- 1.2 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 10V, f = 1.0MHz VDD = 4.5V, ID = 6A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) -- 2.7 -- Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 37 -- -- 7 -- Turn-off Fall Time VDD = 4.5V, ID = 3A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 6 A VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- 0.6 1 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G6N02L Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G6N02L Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) 15 VDS = 5V 10 TJ = 125ºC 5 TJ = 25ºC 0 0 VDS, Drain-to-Source Voltage (V) 20 VGS = 2.5V 10 VGS = 4.5V 5 2 4 6 8 1.5 2 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 25 0 1 VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 15 0.5 5 VDS = 10V ID=6A 4 3 2 1 0 0 10 ID-Drain Current（A） 2 4 6 8 10 Qg Gate Charge（nC） Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance vs Vds Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755 -29961466 GOFORD G6N02L Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area Figure 7. Drain-Source On-Resistance 1.4 ID, Drain Current(A) RDS(on), (Normalized) 1.6 VGS =4.5V ID=6A 1.2 1 0.8 0 25 50 75 100 125 150 175 TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G6N02L SOT-23-3L Package Information Dimensions in Millimeters Symbol MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466