GOFORD
G01N20LE
N-Channel Enhancement Mode Power MOSFET
Description
This Product uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used to
form a level shifted high side switch, and for a host of
other applications.
Schematic diagram
General Features
⚫
⚫
⚫
⚫
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
200V
1.7A
< 0.85Ω
< 0.9Ω
G01N20
⚫ 100% Avalanche Tested
Marking and pin assignment
⚫ RoHS Compliant
⚫ ESD (HBM)>5.0KV
Application
⚫ Power switch
⚫ DC/DC converters
SOT-23-3L
Device
Package
Marking
Packaging
G01N20LE
SOT-23-3L
G01N20
3000pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
200
V
ID
1.7
A
IDM
6.8
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
1.5
W
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
RthJA
83
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
Thermal Resistance, Junction-to-Ambient
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TEL:0755-29961263
FAX:0755-29961466 (A1451)
GOFORD
G01N20LE
Specifications TJ = 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
200
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
--
--
1
uA
Gate-Source Leakage
IGSS
VGS = ±20V
--
--
±30
uA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1
1.8
2.5
V
VGS = 10V, ID = 1.7A
--
0.56
0.85
Drain-Source On-Resistance
RDS(on)
VGS = 4.5V, ID = 1.7A
--
0.58
0.9
VDS=15V,ID=1.7A
--
8
--
--
580
--
--
90
--
--
30
--
--
12
--
--
2.5
--
Forward Transconductance
gFS
Ω
S
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VGS = 0V,
VDS = 25V,
f = 1.0MHz
VDD = 100V,
ID = 1.7A,
VGS = 10V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
--
3.8
--
Turn-on Delay Time
td(on)
--
10
--
Turn-on Rise Time
tr
--
12
--
Turn-off Delay Time
td(off)
--
15
--
--
15
--
Turn-off Fall Time
VDD = 100V,
ID = 1.7A,
RG = 2.5Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
IS
TC = 25ºC
--
--
1.7
A
VSD
TJ = 25ºC, ISD = 1.7A, VGS = 0V
--
--
1.2
V
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
Identical low side and high side switch with identical R G
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466 (A1451)
GOFORD
G01N20LE
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466 (A1451)
GOFORD
G01N20LE
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 2. Transfer Characteristics
ID, Drain Current (A)
ID, Drain Current (A)
Figure 1. Output Characteristics
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 4. Gate Charge
Vgs Gate-Source Voltage(V)
RDS(on), On-Resistance (Ω)
Figure 3.Drain Source On Resistance
VGS = 4.5V
VGS = 10V
ID-Drain Current(A)
VDS = 100V
ID=1.7A
Qg Gate Charge(nC)
Figure 6. Source-Drain Diode Forward
Capacitance(pF)
Is, Reverse Drain Current (A)
Figure 5. Capacitance vs Vds
Vds Drain-Source Voltage(V)
www.gofordsemi.com
TEL:0755-29961263
VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466 (A1451)
GOFORD
G01N20LE
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 8. Safe Operation Area
VGS = 10V
ID=1.7A
ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
TJ, Junction Temperature (ºC)
VDS, Drain-Source Voltage(V)
ZthJC, Thermal Impedance (ºC/W)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466 (A1451)
GOFORD
G01N20LE
SOT-23-3L Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
MAX.
A
2.80
2.90
3.00
B
1.50
1.60
1.70
C
1.00
1.10
1.20
D
0.30
0.40
0.50
E
0.25
0.40
0.55
G
1.90
H
0.00
-
0.10
J
0.047
0.127
0.207
K
2.60
2.80
3.00
All Dimensions in mm
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466 (A1451)
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