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G01N20LE

G01N20LE

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    SOT23-3

  • 描述:

    G01N20LE

  • 详情介绍
  • 数据手册
  • 价格&库存
G01N20LE 数据手册
GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 200V 1.7A < 0.85Ω < 0.9Ω G01N20 ⚫ 100% Avalanche Tested Marking and pin assignment ⚫ RoHS Compliant ⚫ ESD (HBM)>5.0KV Application ⚫ Power switch ⚫ DC/DC converters SOT-23-3L Device Package Marking Packaging G01N20LE SOT-23-3L G01N20 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 200 V ID 1.7 A IDM 6.8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 83 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1451) GOFORD G01N20LE Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V -- -- 1 uA Gate-Source Leakage IGSS VGS = ±20V -- -- ±30 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 2.5 V VGS = 10V, ID = 1.7A -- 0.56 0.85 Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 1.7A -- 0.58 0.9 VDS=15V,ID=1.7A -- 8 -- -- 580 -- -- 90 -- -- 30 -- -- 12 -- -- 2.5 -- Forward Transconductance gFS Ω S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 100V, ID = 1.7A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 3.8 -- Turn-on Delay Time td(on) -- 10 -- Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 15 -- -- 15 -- Turn-off Fall Time VDD = 100V, ID = 1.7A, RG = 2.5Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 1.7 A VSD TJ = 25ºC, ISD = 1.7A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1451) GOFORD G01N20LE Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1451) GOFORD G01N20LE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Gate Charge Vgs Gate-Source Voltage(V) RDS(on), On-Resistance (Ω) Figure 3.Drain Source On Resistance VGS = 4.5V VGS = 10V ID-Drain Current(A) VDS = 100V ID=1.7A Qg Gate Charge(nC) Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance vs Vds Vds Drain-Source Voltage(V) www.gofordsemi.com TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1451) GOFORD G01N20LE Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V ID=1.7A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1451) GOFORD G01N20LE SOT-23-3L Package Information Dimensions in Millimeters Symbol MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1451)
G01N20LE
1. 物料型号:G01N20LE 2. 器件简介:使用先进的沟槽技术制造的N-Channel增强型功率MOSFET,具有出色的RDS(ON)和低栅极电荷特性。 3. 引脚分配:SOT-23-3L封装,引脚标记为S、G、D。 4. 参数特性: - 漏源电压(VDS):200V - 连续漏电流(ID):1.7A - 脉冲漏电流(IOM):6.8A - 栅源电压(VGs):+20V - 功耗(P0):1.5W - 工作结温范围(TJ,Tstg):-55°C至150°C - 热阻(RthJA):83°C/W 5. 功能详解:适用于功率开关、DC/DC转换器等应用。 6. 应用信息:作为功率开关或DC/DC转换器使用。 7. 封装信息:SOT-23-3L封装,每卷3000件。
G01N20LE 价格&库存

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G01N20LE
  •  国内价格 香港价格
  • 3000+1.044243000+0.13000
  • 6000+0.950076000+0.11828
  • 9000+0.902079000+0.11230
  • 15000+0.8481115000+0.10558
  • 21000+0.8161621000+0.10161
  • 30000+0.7850930000+0.09774
  • 75000+0.7282675000+0.09066

库存:718

G01N20LE
  •  国内价格 香港价格
  • 1+4.671931+0.58161
  • 10+2.8842210+0.35906
  • 100+1.83208100+0.22808
  • 500+1.37797500+0.17155
  • 1000+1.231101000+0.15326

库存:718

G01N20LE
  •  国内价格
  • 5+1.16792
  • 50+0.93388
  • 150+0.83355
  • 500+0.70838
  • 3000+0.58050
  • 6000+0.54713

库存:3440

G01N20LE
    •  国内价格
    • 1+0.85900

    库存:5