G08N03D2

GOFORD G08N03D2 N-Channel Enhancement Mode Power MOSFET Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 5V) Schematic diagram 30V 8A < 20mΩ < 30mΩ G08N03 ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Marking and pin assignment Application ⚫ Power switch ⚫ DC/DC converters DFN2*2 Device Package Marking Packaging G08N03D2 DFN2*2 G08N03 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 30 V ID 8 A IDM 32 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 17 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 6.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 GOFORD G08N03D2 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 2 V VGS = 10V, ID = 4A -- 13 20 Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 4A -- 21 30 VDS=5V,ID=3A -- 30 -- -- 681 -- -- 219 -- -- 175 -- -- 15 -- -- 2 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 15V, f = 1.0MHz VDD = 15V, ID = 5.6A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) -- 5 -- Turn-on Rise Time tr -- 3.5 -- Turn-off Delay Time td(off) -- 19 -- -- 3.5 -- Turn-off Fall Time VDD = 15V, ID = 5A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 8 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Time Trr IS = 3A, VGS = 0V di/dt=500A/us -- 8 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 GOFORD G08N03D2 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 GOFORD G08N03D2 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance（mΩ） Vgs Gate-Source Voltage（V） Figure 3. Gate Charge VDS=15V ID=5.6A Qg Gate Charge（nC） Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) Capacitance(pF) VGS=10V ID-Drain Current（A） Figure 5. Capacitance Ciss Coss Crss Vds Drain-Source Voltage(V) www.gofordsemi.com VGS=4.5V TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 GOFORD G08N03D2 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 GOFORD G08N03D2 DFN2×2-6L Package Information www.gofordsemi.com TEL：0755-29961263 TFX:0755-29961466