G2003A

GOFORD G2003A Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram ● VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V (Typ:430mΩ) RDS(ON) < 560mΩ @ VGS=10V (Typ:440mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Marking and Pin Assignment ● Excellent package for good heat dissipation ● RoHS Compliant Application ● Power switching application SOT-23-3L Ordering Information Part Number Marking G2003A Case Packaging SOT-23-3L G2003A 3000pcs/Reel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 190 V Gate-Source Voltage VGS ±20 V ID 3 A IDM 8 A PD 1.8 W TJ,TSTG -55 To 150 ℃ Parameter Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 70 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 190 - - V Zero Gate Voltage Drain Current IDSS VDS=190V,VGS=0V - - 1 μA Off Characteristics www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G2003A Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.7 3 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A - 430 540 mΩ Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=2A - 440 560 mΩ gFS VDS=15V,ID=2A - 8 - S - 580 - PF - 90 - PF - 3 - PF - 10 - nS On Characteristics ±100 nA (Note 3) Forward Transconductance Dynamic Characteristics V (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Crss VDS=25V,VGS=0V, F=1.0MHz (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=100V, RL=15Ω - 12 - nS td(off) VGS=10V,RG=2.5Ω - 15 - nS - 15 - nS - 12 - 2.5 - nC - 3.8 - nC - - 1.2 V - - 3 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=100V,ID=2A, VGS=10V nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=3A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G2003A Test Circuit 1）EAS test circuit 2）Gate charge test circuit 3）Switch Time Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G2003A ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current www.gofordsemi.com Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward TEL：0755-29961263 FAX:0755 -29961466 GOFORD Normalized BVdss C Capacitance (pF) G2003A TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vth (V) Variance ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466 GOFORD G2003A SOT-23-3L package information A E K B J D G H C SOT-23-3L Dim MIN NOM MAX A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm www.gofordsemi.com TEL：0755-29961263 FAX:0755 -29961466