2301

GOFORD 2301 DESCRIPTION D The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID 64mΩ 89 mΩ -3 A @-4.5V(Typ) @-2.5V(Typ) -20V ● High Power and current handing capability Marking and pin Assignment ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch SOT-23 ●Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -20 V ±12 V -3 A -10 A 1 W -55 To 150 ℃ 125 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 -24 - V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA www.goford.cn TEL：0755-86350980 FAX：0755-86350963 Page 1 GOFORD Gate-Body Leakage Current 2301 IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3A - 64 110 mΩ VGS=-2.5V, ID=-2A - 89 140 mΩ VDS=-5V,ID=-2.8A - 9.5 - S - 405 - PF - 75 - PF - 55 - PF - 11 - nS On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,ID=-1A - 35 - nS td(off) VGS=-4.5V,RGEN=10Ω - 30 - nS - 10 - nS - 3.3 12 nC - 0.7 - nC - 1.3 - nC - - -1.2 V - - -1.3 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-3A, VGS=-2.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1.3A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.goford.cn TEL：0755-86350980 FAX：0755-86350963 Page 2 GOFORD 2301 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goford.cn TEL：0755-86350980 FAX：0755-86350963 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance Page 3 GOFORD ID- Drain Current (A) Normalized On-Resistance 2301 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge www.goford.cn TEL：0755-86350980 FAX：0755-86350963 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 GOFORD ID- Drain Current (A) 2301 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goford.cn TEL：0755-86350980 FAX：0755-86350963 Page 5