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G03N10

G03N10

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    SOT89-3

  • 描述:

  • 数据手册
  • 价格&库存
G03N10 数据手册
GOFORD G03N10 Features • High Density Cell Design for Ultra Low RDS(on) • • • Special Process Technology for High ESD Capability Excellent Package for Good Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free. “Green” Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 250°C/W Junction to Ambient(Note 2) Parameter SOT-89 A B Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Volltage VGS ±20 V ID 3 A IDM 20 A PD 500 mW Continuous Drain Current Pulsed Drain Current (Note 3) Total Power Dissipation 4 C E 1 1. Gate 2,4. Drain 3. Source G S Marking: 03A10 J F L DIM A B C D E F G H J K L D H G 2. Surface Mounted on FR4 Board , t≤10s. Internal Structure 3 2 D Note: 1. Halogen free "Green” products are defined as those which contain
G03N10 价格&库存

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