GOFORD
G03N10
Features
•
High Density Cell Design for Ultra Low RDS(on)
•
•
•
Special Process Technology for High ESD Capability
Excellent Package for Good Heat Dissipation
Epoxy Meets UL 94 V-0 Flammability Rating
•
Moisture Sensitivity Level 1
•
•
Halogen Free. “Green” Device (Note 1)
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
N-CHANNEL
MOSFET
Maximum Ratings
•
Operating Junction Temperature Range : -55°C to +150°C
•
Storage Temperature Range: -55°C to +150°C
•
Thermal Resistance: 250°C/W Junction to Ambient(Note 2)
Parameter
SOT-89
A
B
Symbol
Rating
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Volltage
VGS
±20
V
ID
3
A
IDM
20
A
PD
500
mW
Continuous Drain Current
Pulsed Drain Current
(Note 3)
Total Power Dissipation
4
C
E
1
1. Gate
2,4. Drain
3. Source
G
S
Marking: 03A10
J
F
L
DIM
A
B
C
D
E
F
G
H
J
K
L
D
H
G
2. Surface Mounted on FR4 Board , t≤10s.
Internal Structure
3
2
D
Note: 1. Halogen free "Green” products are defined as those which contain
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