GT025N06AT

GT025N06AT N-Channel Enhancement Mode Power MOSFET Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS 60V ID (at VGS = 10V) 170A RDS(ON) (at VGS = 10V) < 2.5mΩ RDS(ON) (at VGS = 4.5V) < 3.2mΩ 100% Avalanche Tested Schematic Diagram l RoHS Compliant Application l Power switch l DC/DC converters l Synchronous Rectification TO-220 Ordering Information Device Package Marking Packaging GT025N06AT TO-220 GT025N06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 60 V ID 170 A IDM 680 A VGS ±20 V EAS 420 mJ PD 215 W TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJA 50 ºC/W Maximum Junction-to-Case RthJC 0.58 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single pulse avalanche energy （note2） Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1569) GT025N06AT Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 -- -- V IDSS VDS = 60V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.6 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 2 2.5 VGS = 4.5V, ID = 15A -- 2.6 3.2 Forward Transconductance gFS VDS = 5V,ID = 20A -- 63 -- -- 4954 -- -- 1378 -- -- 68 -- -- 70 -- -- 21 -- -- 16 -- -- 16 -- -- 9 -- -- 36 -- -- 11 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 30V, f = 1.0MHz VDD = 30V, ID = 20A, VGS = 10V VDD = 30V, ID = 50A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 170 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Chrage Qrr -- 150 -- nC Reverse Recovery Time Trr -- 30 -- ns IF = 20A, VGS = 0V di/dt = 500A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1569) GT025N06AT Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1569) GT025N06AT Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 140 ID, Drain Current (A) 160 10V 4.5V 4V ID, Drain Current (A) 160 Figure 2. Transfer Characteristics 3.6V 120 3.5V 100 80 VGS=3.3V 60 40 120 100 80 60 25 ºC 40 20 20 0 VDS=5V 140 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 4 3.5 VGS=4.5V 2 VGS=10V 1.5 1 0.5 0 0 10 20 30 4000 Coss 2000 Crss 0 10 20 30 40 50 4 2 0 20 40 60 80 60 VDS Drain-Source Voltage(V) www.gofordsemi.com 6 Is, Reverse Drain Current (A) Capacitance(pF) Ciss 5000 0 8 Figure 6. Source-Drain Diode Forward 7000 1000 VDD=30V ID=20A Qg Gate Charge（nC） Figure 5. Capacitance vs Vds 3000 8 10 0 40 ID-Drain Current（A） 6000 6 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 5 4.5 3 4 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 2.5 2 TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1569) GT025N06AT Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=20A VGS=4.5V ID=15A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1569) GT025N06AT TO-220 Package Information Dimensions in Millimeters Symbol A A1 A2 b b2 c D D1 D2 E e e1 H1 L L1 ∅ P Q www.gofordsemi.com MIN. NOM. MAX. 4.37 1.25 2.2 0.7 1.7 0.45 15.1 8.8 5.5 9.7 4.57 1.3 2.4 0.8 1.27 0.5 15.6 9.1 　 4.7 1.4 2.6 0.95 1.47 0.6 16.1 9.4 　 10 2.54BSC 5.08BSC 6.5 13.5 3.1 3.6 2.8 10.3 6.25 12.75 　 3.4 2.6 TEL：0755-29961263 6.85 13.8 3.4 3.8 3 FAX:0755-29961466(A1569)