G33N03D3

GOFORD G33N03D3 N-Channel Trench MOSFET Description D1 The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. G2 G1 S1 General Features ⚫ ⚫ ⚫ ⚫ D2 S2 Schematic diagram VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30V 30A < 13mΩ < 18mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Marking and pin assignment Application ⚫ Power switch ⚫ DC/DC converters DFN3.3X3.3-8L Device Package Marking Packaging G33N03D3 DFN3.3X3.3-8L G33N03 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 30 V ID 30 A IDM 85 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 18.5 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 6.7 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1401) GOFORD G33N03D3 Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2.5 V VGS = 10V, ID = 16A -- 9 13 Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 14A -- 14.5 18 -- 1530 -- -- 250 -- -- 200 -- -- 15 -- -- 3 -- mΩ Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 15V, f = 1.0MHz VDD = 15V, ID = 9A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 4.5 -- Turn-on Delay Time td(on) -- 10 -- Turn-on Rise Time tr -- 8 -- Turn-off Delay Time td(off) -- 30 -- -- 5 -- Turn-off Fall Time VDD = 15V, ID = 10A, RG = 1.8Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 30 A VSD TJ = 25ºC, ISD = 16A, VGS = 0V -- -- 1.2 V -- 22 35 ns -- 12 20 nc Reverse Recovery Time trr Reverse Recovery Charge Qrr TJ = 25°C, IF = 10A di/dt = 100A/μs Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1401) GOFORD G33N03D3 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1401) GOFORD G33N03D3 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） Figure 3. Gate Charge Qg Gate Charge（nC） VGS=4.5V VGS=10V ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1401) GOFORD G33N03D3 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V ID = 16A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1401) GOFORD G33N03D3 DFN3.3*3.3 Package Information DFN3.3X.3.3-8L. Dim Mim Max A 2.90 3.10 B 2.90 3.10 C 0.65 0.85 D 0.20 0.40 E 0.00 0.10 F 0.00 0.10 G 0.55 0.75 K 3.15 3.15 A l l Di m e n s i o n s i n mm www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1401)