9N40-220

GOFORD 9N40 Description Features • VDSS RDS(ON) ID 0.515Ω 9A @ 10V (typ) 400V TO-252 TO-251 • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies • Industrial Actuators TO-220 Absolute Maximum Ratings TC=25℃ Symbol unless otherwise specified Max. Parameter TO-220 TO-251 TO-252 Units VDSS Drain-Source Voltage 400 V VGSS Gate-Source Voltage ± 30 V ID Continuous Drain Current IDM EAS dv/dt PD Pulsed Drain Current TC = 25℃ 9 9* 9* A TC = 100℃ 5.75 5.75* 5.75* A 36 36* 36* A note1 Single Pulsed Avalanche Energy Peak Diode Recovery Energy note2 note3 220 mJ 8 V/ns Power Dissipation TC = 25℃ 100 59.5 59.5 W Linear Derating Factor TC > 25℃ 0.89 0.53 0.53 W/℃ 1.25 2.1 2.1 ℃/W RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ *Drain current limited by maximum junction temperature HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD 9N40 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise specified Test Condition Min. Typ. Max. Units VGS = 0V,ID = 250Μa 400 - - V - 0.3 - V/℃ VDS = 400V, VGS = 0V - - 1 µA VDS = 320V, TC = 125℃ - - 10 µA VDS = 0V, VGS = ±30V - - ±100 nA Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage △V(BR)DSS Breakdown Voltage Temperature Reference to 25℃, /△TJ Coefficient ID = 250µA IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current On Characteristics VGS(th) Gate Threshold Voltage note4 VDS = VGS, ID = 250µA 2 - 4 V RDS(on) Static Drain-Source On-Resistance VGS =10V, ID = 4.5A - 0.515 0.607 Ω gFS Forward Transconductance VDS =30V, ID = 4.5A - 8 - S - 740 - pF - 82.8 - pF - 8.75 - pF - 22.13 - nC - 3.6 - nC - 9.57 - nC - 12.4 - ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 320V, ID = 9A, VGS = 10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 200V, ID = 9A, - 20.1 - ns td(off) Turn-Off Delay Time RG = 5Ω, VGS = 10V - 38.5 - ns tf Turn-Off Fall Time - 10.8 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 9 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = 4.5A - - 1.5 V trr Reverse Recovery Time VGS = 0V, IF = 9A, - 320 - ns Qrr Reverse Recovery Charge di/dt =100A/µs - 1345 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 6.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD 9N40 Typical Performance Characteristics 20 20 VGS = 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 12 16 ID,Drain Current,A I D,Drain Current,A 16 18 8 4 25℃ 14 12 10 150℃ 8 6 4 PULSED TEST VDS = 30V 2 0 0 0 5 10 15 20 2 3 4 VDS,Drain-to-Source Voltage,V 6 VGS,Gate-to-Source Figure 1. Output Characteristics 7 8 9 10 Voltage,V Figure 2. Transfer Characteristics 10 1 PULSED TEST VGS = 0V PULSED TEST Tj = 25℃ 0.9 ISD,Reverse Drain Current,A RDS(on) ,Drain-to-Source On Resistance,Ω 5 0.8 0.7 VGS = 10V 0.6 0.5 VGS = 20V 0.4 0.3 0.2 0 2 4 6 8 10 12 14 16 18 20 ID,Drain Current,A 150℃ 1 25℃ 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD,Source-to-Drain Voltage,V Figure 3. Drain-to-Source On Resistance vs. Figure 4. Body Diode Forward Voltage vs. Drain Current and Gate Voltage Source Current and Temperature 10000 Ciss Capacitance,pF 1000 Coss 100 f = 1MHz Ciss = Cgs+Cgd Coss = Cds+Cgd Crss = Cgd 10 Crss 1 0.1 1 10 100 VDS,Drain-to-Source Voltage,V Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD 9N40 3 PULSED TEST VGS = 10V ID = 4.5A 2.5 RDS(on),(Normalized) Drain-to-Source On Resistance BVDSS,(Normalized) Drain-to-Source Breakdown Voltage 1.2 1.1 1 0.9 0.8 -100 -50 0 50 100 150 2 1.5 1 0.5 0 -100 200 -50 TJ,Junction Temperature(℃ ℃) 0 50 100 150 200 TJ,Junction Temperature(℃ ℃) Figure 7. Normalized Breakdown Voltage vs. Figure 8. Normalized On Resistance vs. Junction Temperature Junction Temperature 10 100 9 8 100µs 7 ID,Drain Current,A ID ,Drain Current,A 10 10µs 1ms 1 10ms DC 6 5 4 3 0.1 Operation in This Area is Limited by RDS(on) 0.01 1 10 2 SINGLE PULSE TC=25℃ TJ=150℃ 100 1 0 0 1000 25 50 75 100 125 150 TC,Case Temperature,℃ ℃ VDS,Drain-to-Source Voltage,V Figure 10. Maximum Continuous Drain Current vs. Figure 9. Maximum Safe Operating Area Case Temperature ZθJC,Transient Thermal Impedance,℃ ℃ /W 10 D=0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 Notes: 1.Duty Factor D = t1/t2 2.Peak Tj = Pdm x Zthjc + Tc SINGLE PULSE (THERMAL RESPONSE) 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t,Pulse Duration,s Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD 9N40 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5 GOFORD 9N40 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 6