G3401L

G3401L GOFORD P-Channel Enhancement Mode Power MOSFET Description The G3401L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ Schematic diagram VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) -30V -4.2A < 60mΩ < 70mΩ ⚫ RDS(ON) (at VGS = -2.5V) < 95mΩ ⚫ 100% Avalanche Tested Marking and pin assignment ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters SOT-23-3L Device Package Marking Packaging G3401L SOT-23-3 3401. 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -30 V ID -4.2 A IDM -30 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.2 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 104 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G3401L GOFORD Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA VGS(th) VDS = VGS, ID = -250µA -0.7 -1 -1.3 V VGS = -10V, ID = - 2A -- 52 60 61 70 Gate-Source Threshold Voltage Drain-Source On-Resistance VGS = -4.5V, ID = - 2A RDS(on) Forward Transconductance gFS VGS = -2.5V, ID = - 2A -- 84 95 VDS=-5V,ID=-4.2A -- 10 -- -- 880 -- -- 105 -- -- 65 -- -- 8.5 -- -- 1.8 -- mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = -15V, f = 1.0MHz VDD = -15V, ID = -4.2A, VGS = -4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) -- 7 -- Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 30 -- -- 12 -- Turn-off Fall Time VDD = -15V, ID = -4.2A, RG = 6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- -4.2 A VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G3401L GOFORD Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G3401L GOFORD Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics - ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance -Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） Figure 3. Gate Charge Qg Gate Charge（nC） VGS=-2.5V VGS=-4.5V VGS=-10V -ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) -Is, Reverse Drain Current (A) Figure 5. Capacitance -Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 G3401L GOFORD Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 G3401L GOFORD SOT-23-3L Package Information Dimensions in Millimeters Symbol MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466