GT1003A

GOFORD GT1003A Description The GT1003A uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suitable for use in high frequency Synchronousrecification application. General Features Schematic Diagram @ 10V (Typ) 100V 110mΩ GT1003A 3A ● High density cell design for ultra low Rdson ● Lead free product is acquired Marking and Pin Assignment ● Excellent package for good heat dissipation ● RoHS Compliant Application ●Consumer electronic power supply ●Isolated DC/DC converter ●Motor control SOT-23-3L Ordering Information Part Number GT1003A Case Marking Packaging SOT-23-3L GT1003A 3000pcs/Reel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD EAS Single pulsed avalanche energy (Note 5) Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 100 V ±20 V 3 A 10 A 1.6 W 1.2 mJ -55 To 150 ℃ 80 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 112 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA HTTP://www.gofordsemi.com TEL:07 5 5-29961263 FAX: 0755- 2 9 96146 6 Page 1 GOFORD Gate-Body Leakage Current GT1003A IGSS VGS=±20V,VDS=0V - - ±100 nA VGS(th) RDS(ON) VDS=VGS,ID=250μA 1 1.7 3 V VGS=10V, ID=3A - 110 140 mΩ - 206 - PF - 28.9 - PF On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 1.4 - PF Turn-on Delay Time td(on) - 14.7 - ns Turn-on Rise Time tr - 3.5 - ns - 20.9 - ns - 2.7 - ns - 4.3 - nC - 1.5 - nC - 1.1 - nC VDS=50V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Gate plateau voltage VDD=50V,ID=3A VGS=10V,RGEN=2Ω VDS=50V,ID=3A, VGS=10V Qgd Vplateau 5.0 V Drain-Source Diode Characteristics Diode Forward Current (Note 2) IS VGS