GT55N06

GOFORD GT55N06 Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) @10V (typ) RDS(ON) @4.5V (typ) ID 60V 6.8mΩ 9.5 mΩ 53A ● High density cell design for ultra low Rdson Marking and pin assignment ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability ● RoHS Compliant Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications DFN 5x6-8L Ordering Information Part Number GT55N06 Marking Case GT55N06 Packaging DFN5X6-8L 2500pcs/Reel Absolute Maximum Ratings T A =25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current G TA=25°C TA=100°C Maximum 60 Units V VGS ±20 V ID 53 34 A Pulsed Drain Current C Avalanche energy L=0.5mH C TA=25°C Power Dissipation A TA=70°C IDM EAS Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Symbol Maximum Units °C/W Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case PDSM t ≤ 10s Steady-State Steady-State RθJA RθJC A mJ 110 195 70 W 28 14 17 40 1.3 55 1.8 HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 °C/W °C/W Page 1 GOFORD GT55N06 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Conditions Min Typ ID=250A, VGS=0V 60 65 VDS=60V, V GS=0V VDS=VGS, ID=250A V 6.8 8.2 VGS=4.5V, ID=20A 9.5 12.0 m m 0.85 0.99 V 53 A Diode Forward Voltage IS=20A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge 30 0 S 1988 pF VGS=0V, VDS=30V, f=1MHz 470 pF 14 pF VGS=0V, VDS=0V, f=1MHz 1.6  31 nC 16 nC 6 nC 5 nC 10.5 ns SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge nA 2.5 Diode Forward Voltage Crss ±100 1.7 gFS 1.1 A VGS=10V, ID=20A VSD Output Capacitance 5 VDS=0V, VGS=±20V Units V 1 TJ=55°C VDS=5V, ID=20A Coss Max VGS=10V, VDS=30V, ID=20A tD(on) Turn-on Delay Time tr Turn-on Rise Time VGS=10V, VDS=15V, RL=2.5Ω, 4.5 ns tD(off) Turn-off Delay Time RGEN=3Ω 29.5 ns tf trr Qrr Turn-off Fall Time IF=20 2A,di/dt=500A/µs Body Diode Reverse Recovery Time 2A,di/dt=500A/µs Body Diode Reverse Recovery charge IF=20 8 17 58 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using