G60N04K

G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested 40V 60A < 7mΩ < 12 mΩ Schematic diagram ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Device Package G60N04K TO-252 Marking G60N04 Packaging 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 60 A IDM 200 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 65 W EAS 73 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 2.3 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) （note3） Single pulse avalanche energy Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1335） G60N04K Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.1 1.7 2.5 V VGS = 10V, ID = 30A -- 5.3 7 Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 20A -- 7 12 VDS=5V,ID=20A 15 -- -- -- 1800 -- -- 280 -- -- 190 -- -- 29 -- -- 4.5 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 20A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 6.5 -- Turn-on Delay Time td(on) -- 6.5 -- Turn-on Rise Time tr -- 17 -- Turn-off Delay Time td(off) -- 30 -- -- 17 -- Turn-off Fall Time VDD = 20V, ID = 2A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IS TC = 25ºC -- -- 60 A VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V -- 29 -- ns -- 26 -- nc trr IF=20A,dI/dt=100A/μs Qrr Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G 3. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1335） G60N04K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1335） G60N04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） Figure 3. Gate Charge Qg Gate Charge（nC） VGS=4.5V VGS=10V ID-Drain Current（A） Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance Vds Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 （A1335） G60N04K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS=10V ID=30A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1335） G60N04K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com Dimensions in Millimeters MIN. NOM. MAX. 2.2 2.3 2.4 0 0.2 0.97 1.07 1.17 0.68 0.78 0.9 5.2 5.33 5.5 0.43 0.53 0.63 5.98 6.1 6.22 5.30REF 6.4 6.6 6.8 4.63 2.286BSC 9.4 10.1 10.5 1.38 1.5 1.75 2.90REF 0.51BSC 0.88 1.28 0.5 1 1.65 1.8 1.95 0° 8° TEL：0755-29961263 FAX:0755-29961466 （A1335）