121KD10

Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors 10D Series Data Sheet Features        Wide operating voltage (V1mA) range from 18V to 1100V Fast responding to transient over-voltage Large absorbing transient energy capability Low clamping ratio and no follow-on current Meets MSL level1, per J-STD-020 Operating temperature: -40℃ ~ +85℃ Storage Temperature：-40℃ ~ +125℃ Applications      Transistor, diode, IC, SCR or SCR semiconductor protection Surge protection in consumer electronics Surge protection in industrial electronics Surge protection in electronic home appliances, gas and petroleum appliances Relay and electromagnetic valve surge absorption Part Number Code and Marking Code www.liownsemi.com 掌握芯技术Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors Dimensions T D K≤3.0 P d W Straight leads Item D H L d P T Dimension (mm) 10.0~12.5 10.5~16.0 ≥20.0 0.8±0.05 7.5±0.8 W Refer to the following table Model T W Model T W Model T W 180K 2.0~4.6 1.5±0.8 151K 2.2~5.4 1.8±0.8 471K 3.3~6.7 3.2±0.8 220K 2.1~4.7 1.6±0.8 181K 2.3~4.8 1.9±0.8 511K 3.4~6.8 3.4±0.8 270K 2.1~4.8 1.8±0.8 201K 2.4~5.0 2.0±0.8 561K 3.6~7.0 3.6±0.8 330K 2.2~5.0 1.7±0.8 221K 2.5~5.1 2.1±0.8 621K 3.8~7.3 3.9±0.8 390K 2.1~5.3 1.8±0.8 241K 2.6~5.2 2.2±0.8 681K 4.0~7.6 4.2±0.8 470K 2.2~5.4 1.9±0.8 271K 2.6~5.4 2.4±0.8 751K 4.3~8.0 4.3±0.8 560K 2.3~5.5 2.1±0.8 301K 2.7~5.5 2.5±0.8 781K 4.4~8.1 4.4±0.8 680K 2.4~5.6 2.4±0.8 331K 2.7~5.8 2.5±0.8 821K 4.6~8.3 4.6±0.8 820K 2.1~4.7 1.8±0.8 361K 2.9~6.0 2.7±0.8 911K 4.8~8.8 5.0±0.8 101K 2.4~4.9 2.0±0.8 391K 3.0~6.2 2.8±0.8 102K 5.4~9.3 5.0±0.8 121K 2.4~5.1 2.2±0.8 431K 3.2~6.5 3.0±0.8 112K 5.8~9.9 5.4±0.8 www.liownsemi.com 掌握芯技术Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors Electrical Characteristics Model Varistor Voltage Maximum Allowable Voltage Maximum Clamping Voltage Surge Current Maximum Energy (10/1000μs) Maximum Leakage Current @83% of V1mA Rated Power Typical Capacitance (Reference) V1mA (V) VAC (V) VDC (V) IP (A) VC (V) I (A) E (J) IR (μA) P (W) @1KHz (pF) 180KD10 18(15~21.6) 11 14 5 36 500 2.1 50 0.05 5600 180KD10J 18(15~21.6) 11 14 5 36 1000 3 50 0.05 5600 220KD10 22(19.5~26) 14 18 5 43 500 2.5 50 0.05 4500 220KD10J 22(19.5~26) 14 18 5 43 1000 5 50 0.05 4500 270KD10 27(24~31) 17 22 5 53 500 3 50 0.05 3700 270KD10J 27(24~31) 17 22 5 53 1000 6 50 0.05 3700 330KD10 33(29.5~36.5) 20 26 5 65 500 4 50 0.05 3000 330KD10J 33(29.5~36.5) 20 26 5 65 1000 7 50 0.05 3000 390KD10 39(35~43) 25 31 5 77 500 4.6 50 0.05 2400 390KD10J 39(35~43) 25 31 5 77 1000 9 50 0.05 2400 470KD10 47(42~52) 30 38 5 93 500 5.5 50 0.05 2100 470KD10J 47(42~52) 30 38 5 93 1000 11 50 0.05 2100 560KD10 56(50~62) 35 45 5 110 500 7 50 0.05 1800 560KD10J 56(50~62) 35 45 5 110 1000 13 50 0.05 1800 680KD10 68(61~75) 40 56 5 135 500 8.2 50 0.05 1500 680KD10J 68(61~75) 40 56 5 135 1000 15 50 0.05 1500 820KD10 82(74~90) 50 65 25 135 2500 12 25 0.4 1200 820KD10J 82(74~90) 50 65 25 135 3500 17 25 0.4 1200 101KD10 100(90~110) 60 85 25 165 2500 15 25 0.4 1000 101KD10J 100(90~110) 60 85 25 165 3500 18 25 0.4 1000 121KD10 120(108~132) 75 100 25 200 2500 18 25 0.4 830 121KD10J 120(108~132) 75 100 25 200 3500 21 25 0.4 830 151KD10 150(135~165) 95 125 25 250 2500 22 25 0.4 670 151KD10J 150(135~165) 95 125 25 250 3500 25 25 0.4 670 181KD10 180(162~198) 115 150 25 300 2500 27 25 0.4 560 181KD10J 180(162~198) 115 150 25 300 3500 30 25 0.4 560 201KD10 200(180~220) 130 170 25 340 2500 30 25 0.4 500 201KD10J 200(180~220) 130 170 25 340 3500 35 25 0.4 500 221KD10 220(198~242) 140 180 25 360 2500 32 25 0.4 450 221KD10J 220(198~242) 140 180 25 360 3500 39 25 0.4 450 241KD10 240(216~264) 150 200 25 395 2500 35 25 0.4 420 241KD10J 240(216~264) 150 200 25 395 3500 42 25 0.4 420 271KD10 270(243~297) 175 225 25 455 2500 37 25 0.4 370 www.liownsemi.com 掌握芯技术Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors Electrical Characteristics Model Varistor Voltage Maximum Allowable Voltage Maximum Clamping Voltage Surge Current Maximum Energy (10/1000μs) Maximum Leakage Current @83% of V1mA Rated Power Typical Capacitance (Reference) V1mA (V) VAC (V) VDC (V) IP (A) VC (V) I (A) E (J) IR (μA) P (W) @1KHz (pF) 271KD10J 270(243~297) 175 225 25 455 3500 49 25 0.4 370 301KD10 300(270~330) 190 250 25 500 2500 40 25 0.4 330 301KD10J 300(270~330) 190 250 25 500 3500 54 25 0.4 330 331KD10 330(297~363) 210 275 25 550 2500 43 25 0.4 300 331KD10J 330(297~363) 210 275 25 550 3500 58 25 0.4 300 361KD10 360(324~396) 230 300 25 595 2500 47 25 0.4 280 361KD10J 360(324~396) 230 300 25 595 3500 65 25 0.4 280 391KD10 390(351~429) 250 320 25 650 2500 60 25 0.4 260 391KD10J 390(351~429) 250 320 25 650 3500 70 25 0.4 260 431KD10 430(387~473) 275 350 25 710 2500 65 25 0.4 230 431KD10J 430(387~473) 275 350 25 710 3500 80 25 0.4 230 471KD10 470(423~517) 300 385 25 775 2500 67 25 0.4 210 471KD10J 470(423~517) 300 385 25 775 3500 85 25 0.4 210 511KD10 510(459~561) 320 415 25 845 2500 69 25 0.4 200 511KD10J 510(459~561) 320 415 25 845 3500 90 25 0.4 200 561KD10 560(504~616) 350 460 25 925 2500 70 25 0.4 180 561KD10J 560(504~616) 350 460 25 925 3500 92 25 0.4 180 621KD10 620(558~682) 385 505 25 1025 2500 72 25 0.4 160 621KD10J 620(558~682) 385 505 25 1025 3500 95 25 0.4 160 681KD10 680(612~748) 420 560 25 1120 2500 75 25 0.4 150 681KD10J 680(612~748) 420 560 25 1120 3500 98 25 0.4 150 751KD10 750(675~825) 460 615 25 1240 2500 77 25 0.4 130 751KD10J 750(675~825) 460 615 25 1240 3500 100 25 0.4 130 781KD10 780(702~858) 485 640 25 1290 2500 80 25 0.4 125 781KD10J 780(702~858) 485 640 25 1290 3500 105 25 0.4 125 821KD10 820(738~902) 510 670 25 1355 2500 85 25 0.4 120 821KD10J 820(738~902) 510 670 25 1355 3500 110 25 0.4 120 911KD10 910(819~1001) 550 745 25 1500 2500 93 25 0.4 110 911KD10J 910(819~1001) 550 745 25 1500 3500 130 25 0.4 110 102KD10 1000(900~1100) 625 825 25 1650 2500 102 25 0.4 100 102KD10J 1000(900~1100) 625 825 25 1650 3500 140 25 0.4 100 112KD10 1100(990~1210) 680 895 25 1815 2500 115 25 0.4 90 112KD10J 1100(990~1210) 680 895 25 1815 3500 155 25 0.4 90 www.liownsemi.com 掌握芯技术Core Technology （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors Electrical Ratings Items Varistor Voltage Test Condition/Description Requirement The voltage between two terminals with the specified measuring current 1mA.DC applied is called Vb. Maximum Allowable Voltage The recommended maximum sine wave voltage (RMS) or the Maximum DC voltage can be applied continuously. Maximum Clamping Voltage The maximum voltage between two terminals with the specification standard impulse current. Applied waveform: 8/20μs Surge Current To meet the The maximum current within the varistor voltage change of ±10% with Specified value the standard impulse current (8/20μs) applied one time. Energy The maximum energy within the varistor voltage change of ±10% when one impulse of 10/1000μs is applied. Leakage Current The current through the varistor when 0.83V1mA is applied to both end. Rated Power The maximum average power that can be applied within the specified ambient temperature. Varistor Voltage Temp. Coefficient Surge Life ≤0.05%/℃ The change of V1mA shall be measured after the impulse listed below which is applied 10,000 times continuously with the interval of ten seconds at room temperature. 10D series www.liownsemi.com 180K to 680K 50A (8/20μs) 820K to 112K 100A (8/20μs) 掌握芯技术Core Technology |ΔV1mA/V1mA |≤10% （V1） Liown Semiconductor Co.,Ltd. 里阳半导体有限公司 浙江省玉环市半导体科技产业园 Metal Oxide Varistors Mechanical Characteristics and Reliability Items Test conditions / Methods Specifications Gradually applying the force specified and keeping the unit fixed for 10±1 sec. Tensile Strength of Terminals Terminal diameter (mm) Force (kg) 0.5