AO4459

UMW R AO4459 P-Channel MOSFET D General Description The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. G Product Summary S VDS = -30V ID = -6.5 A RDS(ON) < 42mΩ @ VGS=10V A p p lic a tio n Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -6.5 ID TA=70°C Maximum -30 -5.3 A IDM -30 Avalanche Current C IAS, IAR 17 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 14 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead www.umw-ic.com 3.1 PD TA=70°C -55 to 150 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 Typ 31 59 16 RθJA RθJL 1 °C Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4459 P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C ±100 nA -2.5 V A 56 60 mΩ 14 IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Ciss Input Capacitance Qg(10V) -1.5 VGS=-4.5V, ID=-5A Diode Forward Voltage Gate resistance µA mΩ IS Rg -1 -5 42 VSD Output Capacitance Units V 33 VDS=-5V, ID=-6.5A Reverse Transfer Capacitance Max VGS=-10V, ID=-6.5A Forward Transconductance Coss Typ VDS=-30V, VGS=0V gFS Crss Min -30 -0.8 VGS=0V, VDS=-15V, f=1MHz S -1 V -3.5 A 520 pF 100 pF 65 pF 7.5 11.5 Ω Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=0V, f=1MHz 3.5 VGS=-10V, VDS=-15V, ID=-6.5A 1.6 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 7.5 ns 5.5 ns 19 ns 7 ns ns ns nC VGS=-10V, VDS=-15V, RL=2.5Ω =2.5Ω, RGEN=3Ω IF=-6.5A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs , 11 5.3 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using