AO4614

UMW R AO4614 40V P-Channel and N-Channel MOSFET D1 D2 General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. G1 G2 S1 S2 n-channel p-channel Product Summary N-Channel VDS (V) = 40V, ID = 6A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 26mΩ (VGS=4.5V) P-Channel -40V -5A (VGS=-10V) S2 G2 S1 G1 < 39mΩ (VGS= -10V) < 50mΩ (VGS= -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Max n-channel 40 VGS TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B 1 2 3 4 D2 D2 D1 D1 8 7 6 5 Max p-channel -40 ±20 ±20 6 -5 ID 5 -4 IDM 30 -30 Units V V A B IAR 14 -20 Repetitive avalanche energy L=0.1mH B EAR 9.8 20 2 2 1.28 1.28 -55 to 150 -55 to 150 Avalanche Current Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C www.umw-ic.com Symbol RθJA RθJL RθJA RθJL 1 mJ W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 50 °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4614 40V P-Channel and N-Channel MOSFET N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min ID=250µA, VGS=0V Typ 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance ±100 2.5 24 30 VGS=4.5V, ID=5A 30 38 Forward Transconductance VDS=5V, ID=6A 19 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance 410 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge VGS=10V, VDS=20V, ID=6A Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs nA V 516 mΩ S 1 V 2 A 650 pF 82 pF 43 pF 4.6 Ω 8.9 10.8 nC 4.3 5.6 nC 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns 6.6 IF=6A, dI/dt=100A/µs µA A gFS Output Capacitance 3 VGS=10V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=40V, VGS=0V VGS(th) Coss Max 18 10 ns 24 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 12 D. The static characteristics in Figures 1 to 6 are obtained using