AOD2610E

UMW R AOD2610E 60V N-Channel MOSFET General Description D • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Compliant G S Product Summary VDS ID (at VGS=10V) 60V 46A RDS(ON) (at VGS=10V) < 9.5mΩ RDS(ON) (at VGS=4.5V) < 13.3mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike L=0.3mH I C 10µs TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case www.umw-ic.com IAS 17 A EAS 43 mJ VSPIKE 72 V 59.5 Steady-State Steady-State W 23.5 6.2 W 4.0 -55 to 150 TJ, TSTG Symbol t ≤ 10s A 15 PDSM TA=70°C A 19 PD TC=100°C V 110 IDSM TA=70°C ±20 36.5 IDM TA=25°C Continuous Drain Current Units V 46 ID TC=100°C Maximum 60 Typ 15 40 1.7 RθJA RθJC 1 Max 20 50 2.1 °C Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AOD2610E 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=20A 1 TJ=55°C 5 1.4 ±10 µA 2.4 V 7.7 9.5 10.3 13.3 mΩ mΩ 1 V 46 A gFS Forward Transconductance VDS=5V, ID=20A 52 Diode Forward Voltage IS=1A, VGS=0V 0.72 IS Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz S 1100 pF 300 pF 28 f=1MHz 0.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.2 pF 2.0 Ω 14.5 25 nC 7 13 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 65 VGS=10V, VDS=30V, ID=20A µA 1.8 VSD DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=60V, VGS=0V IDSS Max 2.5 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 6.5 ns Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 3.5 ns 22 ns 3 ns 19 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.1°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.umw-ic.com 4 UTD Semiconductor Co.,Limited R UMW AOD2610E 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 50 60 Power Dissipation (W) 40 Current rating ID (A) 50 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) www.umw-ic.com 5 UTD Semiconductor Co.,Limited R UMW AOD2610E 60V N-Channel MOSFET Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC Id - Rg DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig www.umw-ic.com Vgs L Isd + Vdd IF t rr dI/dt I RM Vdd VDC - Vds 6 UTD Semiconductor Co.,Limited UMW R AOD2610E 60V N-Channel MOSFET Package Mechanical Data TO-252 E A B2 Dimensions C2 L V1 Ref. Millimeters H D Min. C B G V2 D1 V1 E1 A2 V1 L2 Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 7° V1 DETAIL A Inches Max. A2 D1 DETAIL A Typ. V2 0° 7° 6° 0° 6° Ordering information Order code Package Baseqty Delivery mode UMW AOD2610E TO-252 2500 Tape and reel www.umw-ic.com 7 UTD Semiconductor Co.,Limited