AO4404

UMW R AO4404 N-Channel 20V (D-S) MOSFET Description D The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This G device is suitable for use as a Battery protection or in other Switching application. S General Features N-Channel MOSFET VDS = 30V ID =8.5 A RDS(ON) < 20mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 20 ± 16 12 11 TJ, Tstg Operating Junction and Storage Temperature Range Unit V 10b, c 8b, c 47 3.7 A 2.0b, c 20 21 4.1 2.5 mJ 2.2b, c 1.3b, c - 55 to 150 W °C Thermal resist ance rating Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 39 25 Maximum 55 29 Unit °C/W Notes: a. Base on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Specifications TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ 26 ID = 250 µA VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage ± 100 nA 1 10 VDS ≥ 5 V, VGS = 10 V A 13 20 VGS = 4.5 V, ID = 3 A 19 30 VDS = 10 V, ID = 10 A 50 800 VDS = 10 V, VGS = 0 V, f = 1 MHz 165 pF 73 VDS = 10 V, VGS = 10 V, ID = 10 A 15 23 6.8 10.2 VDS = 10 V, VGS = 5 V, ID = 10 A 2.5 f = 1 MHz 0.36 VDD = 10 V, RL = 1.4 Ω ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 1.8 3.6 16 23 12 16 10 18 8 16 10 20 VDD = 10 V, RL = 1.4 Ω ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 16 22 8 15 ISM Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb ns A 50 VSD Qrr Ω 10 TC = 25 °C IS Body Diode Reverse Recovery Charge nC 2.3 td(on) trr MΩ S 22 Body Diode Reverse Recovery Time µA 20 VGS = 10 V, ID = 8 A tf Fall Time V 16 td(off) Turn-Off Delay Time 3.0 tf tr Rise Time 1.0 VDS =20V , VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time mV/°C -6 VDS = 20 V, VGS = 0 V Rg Gate Resistance V IS = 9 A IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 0.8 1.2 V 15 30 ns 6 12 nC 8 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Typical characteristic 25 °C, unless otherwise noted 50 5 VGS = 10 thru 6 V 4 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 VGS = 4 V 10 TC = - 55 °C 3 2 TC = 25 °C 1 TC = 125 °C 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.015 900 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 4.5 V 0.013 0.011 VGS = 10 V 0.009 Ciss 600 300 Coss 0.007 Crss 0 0.005 0 10 20 30 40 0 50 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 11 A ID = 11 A 8 VDS = 10 V 6 VDS = 15 V 4 1.5 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 1.2 VGS = 4.5 V 0.9 2 0.6 - 50 0 0 4 8 12 16 Gate Charge www.umw-ic.com - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 3 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Typical characteristic 25 °C, unless otherwise noted 0.030 100 0.025 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.020 TJ = 125 °C 0.015 0.010 TJ = 25 °C 0.005 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 50 2.0 40 Power (W) VGS(th) (V) 1.8 ID = 250 µA 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µA I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Typical characteristic 25 °C, unless otherwise noted 18 I D - Drain Current (A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 6 2.0 5 1.5 Power (W) Power (W) 4 3 1.0 2 0.5 1 0 0 25 50 75 100 125 0.0 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Typical characteristic 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET PACKAGE OUTLINE DIMENSIONS SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 7 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R AO4404 N-Channel 20V (D-S) MOSFET Marking AO4404 UMW xxxx ("xxxx"代表年份周期) Ordering information Order code Package Baseqty Deliverymode UMW AO4404 SOP-8 3000 Tape and reel www.umw-ic.com 8 UTD Semiconductor Co.,Limited