AOD442

UMW R AOD442 60V N-Channel MOSFET General Description D The AOD442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. G General Features S VDS 60V 37A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS = 4.5V) < 25mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case www.umw-ic.com IAS, IAR 30 A EAS, EAR 45 mJ 60 Steady-State Steady-State W 30 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s A 5 PDSM TA=70°C A 7 PD TC=100°C V 60 IDSM TA=70°C ±20 26 IDM TA=25°C Units V 37 ID TC=100°C Maximum 60 Typ 17.4 51 1.8 RθJA RθJC 1 °C Max 25 60 2.5 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AOD442 60V N-Channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=48V, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.6 VGS=10V, VDS=5V 60 Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime A 20 20 25 mΩ 1 V 32 A VDS=5V, ID=20A 65 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V 16 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance nA 2.7 VGS=10V, ID=20A Forward Transconductance Crss 100 VGS=4.5V, ID=20A VSD Coss 2.1 µA mΩ gFS IS Units V 1 IGSS Static Drain-Source On-Resistance Max 60 VGS(th) ID(ON) RDS(ON) Typ VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A S 1535 1920 2300 pF 108 155 200 pF 70 116 165 pF 0.3 0.65 0.8 Ω 38 47.6 68 nC 20 24.2 30 nC 4.8 6 7 nC 8.5 14.4 20 nC 7.4 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω ns 5.1 ns 28.2 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 46 5.5 ns 41 ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using