AO4406A

UMW R AO4406A 11N06C 30V N-Channel Enhancement Mode MOSFET Description The AO4406A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =12 A RDS(ON) < 13mΩ @ V GS=10V Application Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 12 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 8 A IDM Pulsed Drain Current2 30 A EAS Single Pulse Avalanche Energy3 20 mJ IAS Avalanche Current 22 A PD@TA=25℃ Total Power Dissipation4 4.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 50 ℃/W RθJC Thermal Resistance Junction-Case1 30 ℃/W www.umw-ic.com 1 友台半导体有限公司 UMW R AO4406A 11N06C 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=10A --- 10 13 RDS(ON) VGS(th) Static Drain-Source Gate Threshold Voltage VGS=4.5V , ID=8A --1.2 12 1.5 16 2.5 mΩ V △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.8 --- mV/℃ --- 1 Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- IDSS VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 5.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.8 Qg Total Gate Charge (4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time --- 6.2 12.4 Tr On-Resistance2 VDS=15V , VGS=4.5V , ID=10A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 59 106 Turn-Off Delay Time ID=10A --- 27.6 55 Fall Time --- 8.4 16.8 Ciss Input Capacitance --- 960 --- Coss Output Capacitance --- 139 --- Crss Reverse Transfer Capacitance --- 87 --- IS Continuous Source Current1,5 --- --- 10.3 A --- --- 42 A --- --- 1.2 V --- 12.5 --- nS --- 5 --- nC Td(off) Tf ISM VSD Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=10A , TJ=25℃ dI/dt=100A/µs , ns pF Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.umw-ic.com 2 友台半导体有限公司 UMW R AO4406A 11N06C 30V N-Channel Enhancement Mode MOSFET Typical Characteristics 12 42 ID=10A VGS=10V 35 ID Drain Current (A) VGS=7V 11 RDSON (mΩ) VGS=5V 28 VGS=4.5V 21 VGS=3V 9 14 8 7 6 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 2 3 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 12 IS -Source Current(A) 10 8 TJ=150℃ TJ=25℃ 6 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of reverse Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 -50 150 Fig.5 Normalized VGS(th) vs. TJ www.umw-ic.com 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ 3 友台半导体有限公司 UMW R AO4406A 11N06C 30V N-Channel Enhancement Mode MOSFET 10000 100.00 F=1.0MHz 100us 10.00 1000 1ms 10ms ID (A) Capacitance (pF) Ciss 1.00 Coss 100ms 100 Crss 0.10 DC TA=25o C Single Pulse 10 1 5 9 13 17 21 0.01 0.01 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 0.1 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM T ON 0.01 T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.11 Unclamped Inductive Switching Waveform Fig.10 Switching Time Waveform www.umw-ic.com 4 友台半导体有限公司 UMW R AO4406A 11N06C 30V N-Channel Enhancement Mode MOSFET SOP8 Package outline Marking ("xxxx"代表年份周期) Ordering information Order code Package Baseqty Deliverymode UMW AO4406A SOP-8 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司