AO4807

UMW R AO4807 Dual P-Channel MOSFET General Description D1 The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. D2 G1 G2 S1 S2 Features VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) S2 G2 S1 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=25°C TA=70°C ID IDM B Junction and Storage Temperature Range www.umw-ic.com A Units V ±20 V A -30 2 W 1.44 TJ, TSTG -55 to 150 Symbol A D2 D2 D1 D1 Maximum -30 -5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C 8 7 6 5 -6 TA=25°C Power Dissipation A 1 2 3 4 t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 48 74 35 °C Max 62.5 110 40 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4807 Dual P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Min -30 Conditions ID=-250µA, VGS=0V Typ Max -1 VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V -1 -30 -1.5 -5 ±100 -2.5 Units V µA nA V A VGS=-10V, ID=-6A 19 25 mΩ VGS=-4.5V, ID=-5A 25 30 mΩ gFS VSD IS VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 13 -0.76 Ciss Coss Crss Rg Qg(10V) Input Capacitance Output Capacitance Reverse Transfer Capacitance 920 190 122 3.6 18.5 pF pF pF Ω nC 9.6 2.7 4.5 nC nC nC ns ns ns ns IF=-6A, dI/dt=100A/µs 7.7 5.7 20.2 9.5 20 IF=-6A, dI/dt=100A/µs 8.8 Forward Transconductance Gate resistance Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-6A VGS=-10V, VDS=-15V, RL=2.7Ω, RGEN=3Ω -1 -4.2 S V A ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R AO4807 Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -6V -5V 25 VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 15 10 125°C 5 5 VGS=-3V 25°C 0 0 0 1 2 3 4 0 5 0.5 60 1.5 2 2.5 3 3.5 4 4.5 5 1.60 Normalized On-Resistance 55 VGS=-4.5V 50 45 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 ID=-6A 1.40 VGS=-10V 1.20 VGS=-4.5V 1.00 15 0.80 10 0 5 10 15 20 0 25 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 1.0E+01 90 1.0E+00 ID=-6A 80 1.0E-01 70 125°C 60 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ) 50 1.0E-03 50 25°C 1.0E-04 40 25°C 1.0E-05 30 1.0E-06 20 3 4 0.0 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.umw-ic.com 5 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 3 UTD Semiconductor Co.,Limited UMW R AO4807 Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 0 0 4 8 12 16 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 0.1s 1ms 10ms 1s 20 25 30 TJ(Max)=150°C TA=25°C 20 10 10s DC 0 0.001 0.1 0.1 15 30 Power (W) RDS(ON) limited 1.0 10 40 TJ(Max)=150°C, TA=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 www.umw-ic.com 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000 UTD Semiconductor Co.,Limited UMW R AO4807 Dual P-Channel MOSFET PACKAGE OUTLINE DIMENSIONS SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 5 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R AO4807 Dual P-Channel MOSFET Marking AO4807 UMW xxxx ("xxxx"代表年份周期) Ordering information Order code Package Baseqty Deliverymode UMW AO4807 SOP-8 3000 Tape and reel www.umw-ic.com 6 UTD Semiconductor Co.,Limited