AO4443

UMW R AO4443 -40V P-Channel Enhancement Mode MOSFET Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID = -8 A RDS(ON) < 37mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -40 V VGS Gate-Source Voltage (VDS=0V) ±20 V Drain Current-Continuous(Tc=25℃) -20 A Drain Current-Continuous(Tc=100℃) -8 A -20 A Maximum Power Dissipation(Tc=25℃) 37.5 W Maximum Power Dissipation(Tc=100℃) 19 W -55 To 175 ℃ 4 ℃/W ID IDM (pluse) (Note 1) Drain Current-Continuous@ Current-Pulsed PD TJ,TSTG R JC www.umw-ic.com Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Case 1 友台半导体有限公司 UMW R AO4443 -40V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min -40 Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA IDSS Zero Gate Voltage Drain Current VDS=-32V,VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=-250μA -3 V VGS(th) gFS RDS(ON) Ciss Forward Transconductance Drain-Source On-State Resistance -1 V -2 VDS=-5V,ID=-10A 25 VGS=-10V, ID=-20A VGS=-4.5V, ID=-10A 35 42 Input Capacitance VDS=-25V,VGS=0V, f=1.0MHz S 46 52 mΩ mΩ 840 pF 92 pF Coss Output Capacitance Crss Reverse Transfer Capacitance 60 pF td(on) Turn-on Delay Time 5 nS tr Turn-on Rise Time 12 nS Turn-Off Delay Time 20 nS tf Turn-Off Fall Time 4.5 nS Qg Total Gate Charge 20 nC Qgs Gate-Source Charge 2.5 nC Qgd Gate-Drain Charge 4.5 nC ISD Source-Drain Current(Body Diode) VSD Forward on Voltage td(off) VGS=-10V, VDS=-20V, RL=1.6 ,RGEN=3 VGS=-10V, VDS=-20V, ID=-15A VGS=0V,IS=-20A -20 A -1.2 V Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Switch Time Test Circuit and Switching Waveforms： www.umw-ic.com 2 友台半导体有限公司 UMW R AO4443 -40V P-Channel Enhancement Mode MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure2. Drain Current -ID Drain Current(A) Power Dissipation(W) Figure1. Power Dissipation TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure3. Output Characteristics www.umw-ic.com Figure4. Transfer Characteristics 3 友台半导体有限公司 UMW R AO4443 -40V P-Channel Enhancement Mode MOSFET Figure6. RDS(ON) vs Junction Temperature C Capacitance(pF) Figure5. Capacitance -VDS Drain-to-Source Voltage(V) Figure8. Gate Charge Waveforms -Vgs (V) Figure7. VGS(th) vs Junction Temperature Qg(nC) Figure9. Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 UMW R AO4443 -40V P-Channel Enhancement Mode MOSFET SOP8 Package outline Marking ("xxxx"代表年份周期) Ordering information Order code Package Baseqty Deliverymode UMW AO4443 SOP-8 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司