2N7002B

UMW 2N7002B R UMW 2N7002B SOT - 23 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) V(BR)DSS ID RDS(on)MAX SOT-23   5Ω@10V  60 V 115mA 7Ω@5V   1. GATE 2. SOURCE 3. DRAIN APPLICATION Load Switch for Portable Devices z DC/DC Converter FEATURE z High density cell design for low RDS(ON) Voltage controlled small signal switch z Rugged and reliable z z High saturation current capability z Equivalent Circuit MARKING 7002 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 0.115 A Power Dissipation PD 0.225 W RθJA 556 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient www.umw-ic.com 1 ℃ 友台半导体有限公司 UMW R UMW 2N7002B SOT - 23 Plastic-Encapsulate MOSFETS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit V(BR)DSS VGS=0 V, ID=250 µA 60 Vth(GS) VDS=VGS, ID=250 µA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±20 V ±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V Drain-Source On-Resistance RDS(on) Forward Trans conductance gfs Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-source on-voltage VDS(on) Diode Forward Voltage VSD Input Capacitance * Ciss Output Capacitance * Coss Reverse Transfer Capacitance * Crss 2.5 500 V mA VGS=10 V, ID=500mA 5 VGS=5 V, ID=50mA 7 Ω VDS=10 V, ID=200mA 80 VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V 1.2 V IS=115mA, VGS=0 V 0.55 ms 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time * td(on) Turn-off Time * td(off) VDD=25 V, RL=50Ω, 20 ns ID=500mA,VGEN=10 V RG=25Ω 40 *These parameters have no way to verify. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW 2N7002B SOT - 23 Plastic-Encapsulate MOSFETS Typical Characterisitics Transfer Characteristics Output Characteristics 1.0 1.0 V GS =10V,9V,8V,7V,6V,5V T a =25 ć T a =25 ć Pulsed Pulsed 0.8 V GS =4V 0.4 0.2 I 0.6 0.6 DRAIN CURRENT DRAIN CURRENT I D D (A) (A) 0.8 0.4 0.2 V GS =3V V GS =2V 0.0 0 1 2 3 DRAIN TO SOURCE 4 VOLTAGE V 0.0 0 5 2 4 GATE TO SOURCE VOLTAGE (V) DS RDS(ON) —— ID N RDS(ON) —— 8 V GS 10 (V) VGS 6 T a =25 ć Pulsed Pulsed :() T a =25 ć DS(ON) 6 4 ID =500mA R R DS(ON) :() 8 6 V GS =5V ON-RESISTANCE ON-RESISTANCE 4 V GS =10V 2 0 0.0 ID =50mA 2 0 0.2 0.4 0.6 DRAIN CURRENT I 0.8 1.0 0 6 GATE TO SOURCE VOLTAGE (A) D 12 V 18 GS (V) IS —— VSD 1 T a =25 ć 0.3 SOURCE CURRENT I S (A) Pulsed 0.1 0.03 0.01 0.0 0.4 SOURCE TO DRAIN www.umw-ic.com 0.8 VOLTAGE 1.2 V SD 1.6 (V) 3 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW 2N7002B Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 4 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司