AO4466

UMW R AO4466 N-Channel MOSFET General Description D The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. G S Product Summary VDS (V) = 30V ID =10A RDS(ON) < 18mΩ RDS(ON) < 25mΩ (VGS = 10V) (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current Pulsed Drain Current TA=70°C TA=25°C Avalanche Current B, G B, G Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead www.umw-ic.com C V ±20 V ID 7 IDM 64 A 3.1 PD TA=70°C Repetitive avalanche energy 0.1mH Units 30 10 B Power Dissipation Maximum W 2 IAR 12 A EAR 7 mJ -55 to 150 °C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 36 62 18 Max 40 75 24 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AO4466 N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 64 RDS(ON) Static Drain-Source On-Resistance Min 30 VDS=30 VGS=0V TJ=55°C µA 5 1.5 100 nA 2.5 V A mΩ VGS=4.5V, ID=5A 19 25 mΩ VDS=5V, ID =3A IS=1A,VGS=0V 17 Diode Forward Voltage IS Ciss Coss Maximum Body-Diode Continuous Current Input Capacitance VGS=0V, VDS=15V, f=1MHz Output Capacitance Crss Reverse Transfer Capacitance Rg Qg(10V) Gate resistance Total Gate Charge Qgd 1 18 VSD Gate Source Charge Units V 13 Forward Transconductance Qgs Max VGS=10V, ID=10A gFS Qg(4.5V) Total Gate Charge Typ VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A S 0.75 1 V 298 373 2.4 448 A pF 46 67 88 pF 24 41 58 pF 0.6 5.7 1.8 7.1 2.8 8.6 Ω nC 2.7 3.5 4.2 nC 1.2 nC Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 4.3 ns tr Turn-On Rise Time 2.8 ns tD(off) Turn-Off DelayTime 15.8 ns tf trr Turn-Off Fall Time 3 ns VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω IF=10A, dI/dt=100A/µs 8.4 10.5 12.6 3.6 4.5 5.4 trr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs IF=10A, dI/dt=500A/µs Body Diode Reverse Recovery Time 4.7 6.0 7.2 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 5.3 6.6 8 Qrr Body Diode Reverse Recovery Time ns nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using