AO4828

UMW R AO4828 Dual N-Channel MOSFET Description D2 D1 The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G2 G1 Battery protection or in other Switching application. S2 S1 General Features VDS = 60V ID = 6.5 A RDS(ON) < 36mΩ @ V GS=10 V RDS(ON) < 47mΩ @ V GS=4.5V S2 G2 S1 G1 Application Battery protection 1 2 3 4 8 7 6 5 D2 D2 D1 D1 Load switch Uninterruptible power supply Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TA=25℃ Drain Current, VGS @ 4.5V3 6.5 A ID@TA=70℃ Drain Current, VGS @ 4.5V3 5 A IDM Pulsed Drain Current1 30 A PD@TA=25℃ Total Power Dissipation 2.1 W Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-a Maximum Thermal Resistance, Junctionambient3 60 ℃/W TSTG www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R AO4828 Dual N-Channel MOSFET Electrical Characteristics (TA =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 69 - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6A 30 36 mΩ VGS=4.5V, ID=4A 36 47 mΩ VDS=5V,ID=6A 20 - S Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz Crss 1920 PF 155 PF 116 PF (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr td(off) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 8 - nS VDS=30V, RL=4.7Ω - 5 - nS VGS=10V,RGEN=3Ω - 29 - nS - 6 - nS - 50 - nC - 8 - nC - 16 - nC - - 1.2 V - - 7 A - 35 - nS - 43 - nC VDS=30V,ID=6A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time VSD VGS=0V,IS=6A IS TJ = 25°C, IF =7A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton di/dt = 100A/μs (Note3) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R AO4828 Dual N-Channel MOSFET Test Circuit 1) EAS test Circuits 2) Gate charge test Circuit 3) Switch Time Test Circuit www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R AO4828 Dual N-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.umw-ic.com Figure 6 Source- Drain Diode Forward 4 UTD Semiconductor Co.,Limited AO4828 Dual N-Channel MOSFET Power Dissipation (W) C Capacitance (pF) UMW R TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R AO4828 Dual N-Channel MOSFET PACKAGE OUTLINE DIMENSIONS SOP-8 Symbol A A1 A2 b c D E E1 e L θ www.umw-ic.com Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 3.800 4.000 5.800 6.200 1.270(BSC) 0.400 1.270 0° 8° 6 Dimensions In Inches Min Max 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 0.150 0.157 0.228 0.244 0.050(BSC) 0.016 0.050 0° 8° UTD Semiconductor Co.,Limited UMW R AO4828 Dual N-Channel MOSFET Marking AO4828 UMW xxxx ("xxxx"代表年份周期) Ordering information Order code Package Baseqty Deliverymode UMW AO4828 SOP-8 3000 Tape and reel - -