FQD20N06

UMW R FQD20N06 60V N-Channel MOSFET General Description D This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide G superior switching performance and high avalanche energy strength. These devices are suitable for switched mode S power supplies, audio amplifier, DC motor control, and variable switching power applications. VDS ID (at VGS=10V) 60V 30A RDS(ON) (at VGS=10V) < 25mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Continuous Drain Current (TJ = 175 °C)a Limit VGS Gate-Source Voltage TC = 25 °C TC = 100 °C Unit ± 20 ID 28 IDM 100 Continuous Source Current (Diode Conduction) IS 23 Avalanche Current IAS 20 Pulsed Drain Current Single Avalanche Energy (Duty Cycle ≤ 1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C EAS A 20 mJ 100 PD W 3 TJ, Tstg Operating Junction and Storage Temperature Range V 35 - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol t ≤ 10 sec Steady State RthJC Maximum Junction-to-Case www.umw-ic.com RthJA 1 Typical 18 Maximum 22 40 50 3.2 4 Unit °C/W UTD Semiconductor Co.,Limited UMW R FQD20N06 60V N-Channel MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max 2.0 3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 60 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs nA µA 250 50 VGS = 10 V, ID = 15 A V A 25 31 VGS = 10 V, ID = 15 A, TJ = 125 °C 55 VGS = 10 V, ID = 15 A, TJ = 175 °C 69 VGS = 4.5 V, ID = 10 A 30 VDS = 15 V, ID = 15 A 20 VGS = 0 V, VDS = 25 V, f = 1 MHz 140 mΩ 45 S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargeb Qg Gate-Source Chargeb Qgs Gate-Drain Charge b Turn-On Delay Timeb Rise Time b Turn-Off Delay Fall Timeb 11 VDS = 30 V, VGS = 10 V, ID = 23 A 17 3 nC 3 td(on) td(off) pF 60 Qgd tr Timeb 670 VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω tf 8 15 15 25 30 45 25 40 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/µs 30 60 ns 50 A a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Independent of operating temperature. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R FQD20N06 60V N-Channel MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 50 100 VGS = 10 thru 6 V 5V 40 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 4V 20 30 20 TC = 125 °C 10 25 °C 3V - 55 °C 0 0 2 0 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 32 6 0.10 TC = - 55 °C 0.08 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 25 °C 24 125 °C 16 8 0 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 5 10 15 20 25 0 10 20 30 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 V GS - Gate-to-Source Voltage (V) 1000 800 C - Capacitance (pF) 0.06 Ciss 600 400 200 Coss Crss 0 0 6 4 2 0 10 20 30 40 50 0 60 2 4 6 8 10 12 Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Capacitance www.umw-ic.com VDS = 30 V ID = 23 A 8 Gate Charge 3 UTD Semiconductor Co.,Limited UMW R FQD20N06 60V N-Channel MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 100 2.5 VGS = 10 V ID = 15 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature www.umw-ic.com 0 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature ( °C) 4 UTD Semiconductor Co.,Limited UMW R FQD20N06 60V N-Channel MOSFET THERMAL RATINGS 100 25 *rDS(on) Limited 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 20 15 10 10 1 ms 10 ms 1 100 ms dc TC = 25 °C Single Pulse 5 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R FQD20N06 60V N-Channel MOSFET Package Mechanical Data TO-252 E A B2 Dimensions C2 L V1 Ref. Millimeters D H G 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 V2 D1 V1 A2 V1 E1 5.30REF D1 DETAIL A L2 Max. 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 V2 0.268 0.182 0.176 7° V1 DETAIL A Typ. Min. A C Inches Max. Min. B Typ. 0° 0.184 0.065 7° 6° 0° 6° Ordering information Order code UMW FQD20N06 www.umw-ic.com Package Baseqty Delivery mode TO-252 2500 Tape and reel 6 UTD Semiconductor Co.,Limited