AOD4132

UMW R AOD4132 30V N-Channel MOSFET D Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. G S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain B,G Current G TC=100°C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C B C Junction and Storage Temperature Range Maximum Junction-to-Case C www.umw-ic.com V ID 63 200 IAR 30 A EAR 112 mJ A 100 W 50 2.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ±20 IDM PD TC=100°C TA=25°C Power Dissipation A Units V 85 B Pulsed Drain Current Power Dissipation Maximum 30 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC 1 Typ 14.2 39 0.8 °C Max 20 50 1.5 Units °C/W °C/W °C/W UTD Semiconductor Co.,Limited UMW R AOD4132 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max 30 V VDS=24V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A 106 VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 IS Maximum Body-Diode Continuous Current TJ=55°C DYNAMIC PARAMETERS Input Capacitance Ciss Units 5 µA 100 nA 1.8 3 V 2.8 4.4 4 6 mΩ mΩ A 3700 S 1 V 85 A 4400 pF VGS=0V, VDS=15V, f=1MHz 700 VGS=0V, VDS=0V, f=1MHz 0.54 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 63 76 nC Qg(4.5V) Total Gate Charge 33 40 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 390 VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω pF 8.6 nC 17.6 nC 12 ns 15.5 ns 40 ns 14 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 Body Diode Reverse Recovery Time pF 41 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using