ESD5311N

UMW R ESD5311N Descriptions The ESD5311N is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from overPin2 Pin1 stress caused by ESD (Electrostatic Discharge). The ESD5311N incorporates one pair of ultralow capacitance steering diodes plus a TVS diode. The ESD5311N may be used to provide ESD protection up to ±20kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 4A (8/20μs) according to IEC61000-4-5. The ESD5311N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Applications Features ■ Stand-off voltage: 5V Max ■ USB 2.0 and USB 3.0 ■ Transient protection for each line according to ■ HDMI 1.3 and HDMI 1.4 IEC61000-4-2 (ESD): ±20kV (contact discharge) ■ IEC61000-4-5 (surge): 4 A (8/20μs) ■ SATA and eSATA DVI ■ IEEE 1394 ■ PCI Express ■ Ultra-low capacitance: CJ = 0.25pF typ. ■ Ultra-low leakage current: IR < 1nA typ. ■ Low clamping voltage: VCL = 21V typ. @ IPP = 16A (TLP) ■ Solid-state silicon technology ■ Portable Electronics ■ Notebooks Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 84 W Peak pulse current (tp = 8/20μs) IPP 4 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature Storage temperature www.umw-ic.com 1 ±20 kV 125 o TL 260 o TSTG -55~150 o TJ Lead temperature ±20 C C C 友台半导体有限公司 R UMW ESD5311N Electrical characteristics (TA =25 oC, unless otherwise noted) Parameter Symbol Reverse maximum working voltage VRWM Reverse leakage current IR Reverse breakdown voltage Clamping voltage 1) Dynamic resistance 1) Condition Min. VRWM = 5V VBR IT = 1mA 7.5 VCL IPP = 16A, tp = 100ns RDYN Clamping voltage 2) VCL Clamping voltage 3) VCL Junction capacitance VESD = 8kV Max. Unit 5.0 V