HG4953M/TR

HG4953 Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 · -30V/-4.9A , RDS(ON)=53mW(typ.) @ VGS=-10V RDS(ON)=80mW(typ.) @ VGS=-4.5V S1 · Reliable and Rugged · Lead Free and Green Device Available G1 S2 D1 D2 D2 G2 Top View of SOP-8 (RoHS Compliant) D1 (8) D1 (7) D2 (6) D2 (5) Applications · G1 (2) Power Management in Notebook Computer, G2 (4) Portable Equipment and Battery Powered Systems S1 (1) S2 (3) P-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material L : Lead Free Device G: Halogen and Lead Free Device HG4953 Assembly Material Handling Code Temp. Range Package Code HG4953 : XXXXXX XXXXXX - Lot Code HG4953 Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. http://www.hgsemi.com.cn 1 2018 MYA HG4953 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature A -20 A -2 150 Storage Temperature Range PD* Power Dissipation for Single Operation Note: V -4.9 VGS=-10V TSTG RqJA* Unit °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 2 *Surface Mounted on 1in pad area, t £ 10sec. Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VSD a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250mA Gate Leakage Current VGS=±25V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Max. -30 V -1 -30 -1 -1.5 mA -2 V ±100 nA VGS=-10V, IDS=-4.9A 53 60 VGS=-4.5V, IDS=-3.6A 80 95 -0.8 -1.3 11.6 16 ISD=-1.7A, VGS=0V Unit mW V b Qgs Gate-Source Charge Qgd Gate-Drain Charge http://www.hgsemi.com.cn Typ. TJ=85°C VDS=VGS, IDS=250mA Diode Forward Voltage Min. VDS=-24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance SM4953K VDS=-15V, VGS=-10V, IDS=-4.9A 1.3 nC 2.5 2 2018 MYA HG4953 Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition SM4953K Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf trr Turn-off Fall Time Qrr Reverse Recovery Charge Reverse Recovery Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=15W, IDS=-1A, VGEN=-10V, RG=6W IDS=-4.9A, dlSD/dt=100A/ms W 8 625 pF 100 60 6 12 12 23 25 46 6 12 ns 14 ns 5 nC Notes: a : Pulse test ; pulse width£300ms, duty cycle£2%. b : Guaranteed by design, not subject to production testing. http://www.hgsemi.com.cn 3 2018 MYA HG4953 Typical Characteristics Power Dissipation Drain Current 2.5 6.0 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 4.5 3.0 1.5 0.5 o o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 Normalized Transient Thermal Resistance Rd s( on )L im it 100 -ID - Drain Current (A) TA=25 C,VG=-10V 300ms 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0.1 1 10 100 -VDS - Drain - Source Voltage (V) http://www.hgsemi.com.cn 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 Mounted on 1in pad o RqJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 2018 MYA HG4953 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 120 20 VGS= -5, -6, -7, -8, -9, -10V 18 RDS(ON) - On - Resistance (mW) -4V 16 -ID - Drain Current (A) 110 14 12 10 8 -3V 6 4 -2V 2 0 0 1 2 3 4 5 100 VGS= -4.5V 90 80 70 60 VGS= -10V 50 40 30 6 7 20 8 0 2 4 6 8 10 12 14 16 18 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 160 1.8 IDS = -250mA ID=4.9A 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mW) 140 120 100 80 60 40 20 1 2 3 4 5 6 7 8 9 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) http://www.hgsemi.com.cn 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 2018 MYA HG4953 Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 20 VGS = -10V IDS = -4.9A 1.75 10 o Tj=150 C 1.50 -IS - Source Current (A) Normalized On Resistance Source-Drain Diode Forward 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 53mW 0 25 50 75 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 125 150 Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge 900 10 Frequency=1MHz -VGS - Gate-source Voltage (V) C - Capacitance (pF) 700 Ciss 600 500 400 300 200 Coss 100 0 VD= -10V 9 800 ID= -4.9A 8 7 6 5 4 3 2 1 Crss 0 5 10 15 20 25 0 30 2 4 6 8 10 12 QG - Gate Charge (nC) -VDS - Drain-Source Voltage (V) http://www.hgsemi.com.cn 0 6 2018 MYA HG4953 Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS http://www.hgsemi.com.cn 7 2018 MYA