ESD9N12BA

UMW R ESD9N12BA Descriptions The ESD9N12BA is Suppressor) designed components transmission a to protect which are lines TVS (Transient sensitive connected to Voltage electronic data and from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and lightning. The ESD9N12BA may be used to provide ESD protection up to ±30kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 5.5A (8/20μs) according to IEC61000-4-5. The ESD9N12BA is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Applications Features ■ Stand-off voltage: ±12V Max. ■ Computers and peripherals ■ Transient protection for each line according to ■ Cellular handsets IEC61000-4-2 (ESD): ±30kV (contact discharge) ■ Portable Electronics IEC61000-4-5 (surge): 5.5A (8/20μs) ■ Notebooks ■ Capacitance: CJ = 27pF typ. ■ Ultra-low leakage current: IR = 0.1nA typ. ■ Low clamping voltage: VCL = 20V typ. @ IPP = 16A (TLP) ■ Solid-state silicon technology Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 99 W Peak pulse current (tp = 8/20μs) IPP 5.5 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge kV ±30 TJ 125 o Operating temperature TOP -40~85 o Lead temperature TL 260 o TSTG -55~150 o Junction temperature Storage temperature www.umw-ic.com 1 C C C C 友台半导体有限公司 UMW R ESD9N12BA Electrical characteristics (TA=25 oC, unless otherwise noted) Symbol Parameter Stand-off voltage IR Reverse breakdown voltage 1) Dynamic resistance Clamping voltage Min. Typ. VRWM Reverse leakage current Clamping voltage Condition 1) VRWM = 12V 0.1 VBR IT = 1mA 13 VCL IPP = 16A, tp = 100ns RDYN 2) VCL Junction capacitance Max. Unit ±12 V 50 nA 16.5 V 20 V 0.35 Ω IPP = 1A, tp = 8/20μs 16 V IPP = 5.5A, tp = 8/20μs 18 V VR = 0V, f = 1MHz 27 35 pF VR = 12V, f = 1MHz 14 20 pF CJ 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to16A. 2) Non-repetitive current pulse, according to IEC61000-4-5. 100 90 Front time: T1= 1.25 T = 8s 100 90 Time to half-value: T2= 20s Current (%) Peak pulse current (%) Typical characteristics (TA=25oC, unless otherwise noted) 50 T2 10 0 0 10 T T1 tr = 0.7~1ns Time (s) t Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 www.umw-ic.com 60ns 30ns 20 2 友台半导体有限公司 UMW R ESD9N12BA Typical characteristics (TA=25oC, unless otherwise noted) 28 Pulse waveform: tp = 8/20s 19 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 20 18 17 16 15 14 13 0 1 2 3 4 5 6 24 22 20 18 16 14 12 7 f = 1MHz VAC = 50mV 26 0 2 IPP - Peak pulse current (A) 4 6 8 10 12 VR - Reverse voltage (V) Capacitance vs. Reverse voltage Clamping voltage vs. Peak pulse current 1000 % of Rated power Peak pulse power (W) 100 100 10 1 www.umw-ic.com 10 100 Pulse time (s) 1000 80 60 40 20 0 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) 3 友台半导体有限公司 UMW R ESD9N12BA Typical characteristics (TA=25oC, unless otherwise noted) Non-repetitive peak pulse power vs. Pulse time Power derating vs. Ambient temperature ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) TLP current (A) 20 18 Z0 = 50 16 tr = 2ns 14 tp = 100ns 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 TLP voltage (V) TLP Measurement www.umw-ic.com 4 友台半导体有限公司 UMW R ESD9N12BA DFN1006-2 PACKAGE OUTLINE DIMENSIONS Inches Millimeters Dim A B C R D MIN MAX MIN MAX A 0.013 0.020 0.34 0.50 B 0.000 0.002 0.00 0.05 C 0.037 0.042 0.95 1.075 D 0.021 0.026 0.55 0.675 E 0.017 0.021 0.45 0.55 F 0.007 0.011 0.20 0.30 E H F R H 0.015Typ. 0.001 0.40Typ. 0.005 0.05 0.15 Marking CA Ordering information Order code UMW ESD9N12BA www.umw-ic.com Package DFN1006-2 5 Baseqty 10000 Deliverymode Tape and reel 友台半导体有限公司