74HC86M/TR

74HC86 Quad 2−Input Exclusive OR Gate High−Performance Silicon−Gate CMOS PACKAGE REFERENCE The 74HC86 is identical in pinout to the LS86. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. SOIC−14 D SUFFIX Features • • • • • • • • • 14 Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 A High Noise Immunity Characteristic of CMOS Devices In Compliance with JEDEC Standard No. 7A Requirements ESD Performance: HBM  2000 V; Machine Model  200 V Chip Complexity: 56 FETs or 14 Equivalent Gates These are Pb−Free Devices 1 TSSOP−14 DT SUFFIX 14 1 PIN ASSIGNMENT LOGIC DIAGRAM A1 1 14 VCC A1 B1 2 13 B4 B1 Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 A2 B2 A3 B3 A4 B4 FUNCTION TABLE Inputs B Y L L H H L H L H L H H L http://www.hgsemi.com.cn 2 4 5 9 10 12 13 Y= A⊕B Output A 1 = AB + AB 1 3 6 8 11 Y1 Y2 Y3 Y4 PIN 14 = VCC PIN 7 = GND 2019 AUG 74HC86 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter Value Unit – 0.5 to + 7.0 V DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V VCC DC Supply Voltage (Referenced to GND) Vin Vout Iin DC Input Current, per Pin ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C TL Lead Temperature, 1 mm from Case for 10 Seconds (SOIC or TSSOP Package) SOIC Package† TSSOP Package† _C 260 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC Vin, Vout Parameter Min DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) http://www.hgsemi.com.cn VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V 2 Max Unit 2.0 6.0 V 0 VCC V – 55 + 125 _C 0 0 0 1000 500 400 ns 2019 AUG 74HC86 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit VCC (V) – 55 to 25_C v 85_C v 125_C Unit VIH Minimum High−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 A 2.0 3.0 4.5 6.0 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 1.5 2.1 3.15 4.2 V VIL Maximum Low−Level Input Voltage Vout = 0.1 V or VCC – 0.1 V |Iout| v 20 A 2.0 3.0 4.5 6.0 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 0.5 0.9 1.35 1.8 V VOH Minimum High−Level Output Voltage Vin = VIH or VIL |Iout| v 20 A 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 3.0 4.5 6.0 2.48 3.98 5.48 2.34 3.84 5.34 2.20 3.70 5.20 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 6.0 0.26 0.26 0.26 0.33 0.33 0.33 0.40 0.40 0.40 Symbol Parameter Test Conditions Vin = VIH or VIL VOL Maximum Low−Level Output Voltage |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA Vin = VIH or VIL |Iout| v 20 A Vin = VIH or VIL |Iout| v 2.4 mA |Iout| v 4.0 mA |Iout| v 5.2 mA V Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 A 6.0 2.0 20 40 A NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns) Guaranteed Limit Parameter Symbol VCC (V) – 55 to 25_C v 85_C v 125_C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) 2.0 3.0 4.5 6.0 100 80 20 17 125 90 25 21 150 110 31 26 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 1 and 2) 2.0 3.0 4.5 6.0 75 30 15 13 95 40 19 16 110 55 22 19 ns Maximum Input Capacitance — 10 10 10 pF Cin NOTES: 1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). 2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD 33 Power Dissipation Capacitance (Per Gate)* pF * Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). http://www.hgsemi.com.cn 3 2019 AUG 74HC86 tr tf VCC 90% 50% INPUT A OR B 10% tPLH tPHL 90% OUTPUT Y TEST POINT GND 50% 10% tTLH tTHL Figure 1. Switching Waveforms OUTPUT DEVICE UNDER TEST C L* *Includes all probe and jig capacitance Figure 2. Test Circuit A Y B Figure 3. Expanded Logic Diagram (1/4 of Device) http://www.hgsemi.com.cn 4 2019 AUG 74HC86 Important statement: Huaguan Semiconductor Co,Ltd. reserves the right to change the products and services provided without notice. Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage. Our products are not licensed for applications in life support, military, aerospace, etc., so we do not bear the consequences of the application of these products in these fields. Our documentation is only permitted to be copied without any tampering with the content, so we do not accept any responsibility or liability for the altered documents. http://www.hgsemi.com.cn 5 2019 AUG