BTA41-800BW

BTA41 Series 40A 3Quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 40 A VDRM / VRRM 800/1200/1600 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram TO-3P Insulated Marking BTA41 800B XXXX www.fuxinsemi.com Page 1 Ver2.1 BTA41 Series 40A 3Quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 800/1200/1600 V Repetitive peak reverse voltage VRRM 800/1200/1600 V RMS on-state current IT(RMS) 40 A ITSM 400 A I2t 880 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD Test Condition VD =12V RL = 33Ω VD =VDRM Tj =125 ℃ RL =3.3KΩ Value Ⅰ-Ⅱ-Ⅲ MAX. 50 mA Ⅰ-Ⅱ-Ⅲ MAX. 1.3 V Ⅰ-Ⅱ-Ⅲ MIN. 0.2 V 80 mA Ⅰ-Ⅲ MAX. latching current IL IG =1.2IGT Holding current IH IT =100mA MAX. VD=2/3VDRM Gate Open Tj =125℃ ITM =60A tp=380μs Critical-rate of rise of commutation voltage dV/dt Unit Ⅱ 100 60 mA MIN. 1000 V/μs MAX. 1.55 V Tj=25℃ MAX. 10 μA Tj=125℃ MAX. 5 mA STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) TYP. 0.9 ℃/W Rth(j-a) Junction to ambient TYP. 50 ℃/W Page 2 Ver2.1 BTA41 Series 40A 3Quadrants TRIACs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) 50 50 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 40 40 30 30 20 20 10 10 0 0 10 20 30 0 -50 40 I T(RMS) (A) 50 0 FIG.3: Surge peak on-state current versus number of cycles 100 150 Tc ) FIG.4: On-state characteristics (maximum values) 400 I TMS (A) I TM (A) 500 400 Tj=125ºC 100 300 200 10 Tj=25ºC 100 0 1 1 10 100 1000 Number of cycles 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 3.0 I GT,I H,I L(T) / I GT,I H,I L(T=25 I TMS (A) ) 3000 2.5 1000 IGT 2.0 1.5 IH&IL 1.0 0.5 100 0.01 0.1 www.fuxinsemi.com 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BTA41 Series 40A 3Quadrants TRIACs Ordering Information BT A 41 _ 800 B W W: 3Q Triacs B:I GT1-3 ≤50mA A: TO-3P Insulated 800:VDRM /VRRM≥800V 1200:VDRM /VRRM≥1200V 1600:VDRM /VRRM≥1600V IT(RMS): 40A TO-3P Insulated Package Information www.fuxinsemi.com Page 4 Ver2.1