BTB16Q-600BW

BTB16Q FSSeries 16A 3Quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 16 A VDRM VRRM 600 / 800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 3 quadrants products especially recommended for use on inductive load. Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram TO-263AB Marking BTB16 600BW XXXX www.fuxinsemi.com Page 1 Ver2.1 BTB16Q FSSeries 16A 3Quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 16 A ITSM 160 A I2t 140 A2s Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) dIT/dt Peak gate current 50 Ⅰ-Ⅱ-Ⅲ A/μs IGM 4 A PG(AV) 1 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Value Test Condition Gate trigger current IGT VD =12V RL = 33Ω Ⅰ-Ⅱ-Ⅲ Gate trigger voltage VGT Tj =25℃ Ⅰ-Ⅱ-Ⅲ Gate non-trigger voltage VGD VD =VDRM Tj =125℃ latching current IL IG =1.2IGT Holding current IH IT =500mA Critical-rate of rise of commutation voltage dVD/dt CW BW ≤35 ≤50 Unit mA ≤1.3 V ≥0.2 V Ⅰ-Ⅲ ≤50 ≤70 Ⅱ ≤60 ≤80 ≤30 ≤50 mA ≥1000 V/μs VD=2/3VDRM ≥500 Gate Open Tj =125℃ mA STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =23A tp=380μs VD =VDRM VR =VRRM ≤1.55 V Tj=25℃ ≤5 μA Tj=125℃ ≤1 mA THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) 1.2 ℃/W Rth(j-a) Junction to ambient 45 ℃/W Page 2 Ver2.1 BTB16Q FSSeries 16A 3Quadrants TRIACs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) 20 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 18 16 14 15 12 10 10 8 6 5 4 2 0 0 2 4 6 8 10 12 0 14 16 I T(RMS) (A) 0 50 FIG.3: Surge peak on-state current versus number of cycles 100 150 Tc ) FIG.4: On-state characteristics (maximum values) I TMS (A) I TM (A) 200 180 100 160 Tj=125ºC 140 120 100 10 80 60 Tj=25ºC 40 20 0 1 1 10 100 1000 Number of cycles 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) 1000 I TMS (A) 3000 I GT,I H,I L(T) / I GT,I H,I L(T=25 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 2.5 2.0 IGT 1.5 IH&IL 1.0 0.5 100 0.01 www.fuxinsemi.com 0.1 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BTB16Q FSSeries 16A 3Quadrants TRIACs Ordering Information BT B 16 Q _ 600 B W W: 3Q Triacs B:I GT1-3 ≤50mA C:IGT1-3 ≤35mA B :Uninsulated IT(RMS): 16A 600:VDRM /VRRM≥ 600V 800:VDRM /VRRM≥800V A: TO-263AB TO-263AB Package Information Dimensions In Millimeters www.fuxinsemi.com Dimensions In Inches Symbol Min Max Min Max A 9.7 10.4 0.381 0.409 B 1.31 1.62 0.051 0.063 C 0.65 1.22 0.025 0.048 D 1.15 1.36 0.045 0.053 E 0.62 0.95 0.024 0.037 F 8.75 9.32 0.344 0.366 G 14.75 15.8 0.580 0.622 H 0.32 0.48 0.012 0.018 I 1.18 1.36 0.046 0.053 J 0 0.15 0 0.005 K 4.38 4.86 0.172 0.191 L 4.85 5.23 0.190 0.205 Page 4 Ver2.1