BT151D

BT151D FSSeries 12A Standard SCRs Product Summary Symbol Value Unit IT(RMS) 12 A VDRM VRRM 600 / 800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current, Provide high dv/dt rate with strong resistance to electromagnetic interference. Power charger, T-tools, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram A2 G3 K1 TO-252AB Marking BT151 600 XXXX www.fuxinsemi.com Page 1 Ver2.1 BT151D FSSeries 12A Standard SCRs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 12 A ITSM 95 A I2t 45 A2s dIT/dt 50 A/μs IGM 4 A PG(AV) 1 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD Test Condition Value Unit MAX . 10 mA MAX. 1.3 V VD =VDRM Tj =125℃ MIN. 0.2 V VD =12V RL = 140Ω latching current IL IG =1.2IGT MAX. 50 mA Holding current IH IT = 50mA MAX. 40 mA VD=2/3VDRM Gate Open Tj =125℃ MIN. 200 V/μs ITM =16A tp=380μs MAX. 1.55 V Tj=25℃ MAX. 5 μA Tj=125℃ MAX. 2 mA Critical-rate of rise of commutation voltage dVD/dt STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case TYP. 1.3 ℃/W Rth(j-a) Junction to ambient TYP. 70 ℃/W Page 2 Ver2.1 BT151D FSSeries 12A Standard SCRs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) 20 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 18 16 14 15 12 10 10 8 6 5 4 2 0 0 2 4 6 8 10 12 0 14 16 I T(RMS) (A) 0 50 FIG.3: Surge peak on-state current versus number of cycles 100 150 Tc ) FIG.4: On-state characteristics (maximum values) I TMS (A) I TM (A) 200 135 100 120 Tj=125ºC 105 90 75 10 60 45 Tj=25ºC 30 15 0 1 1 10 100 1000 Number of cycles 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) 1000 I TMS (A) 3000 I GT,I H,I L(T) / I GT,I H,I L(T=25 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 2.5 2.0 IGT 1.5 IH&IL 1.0 0.5 100 0.01 www.fuxinsemi.com 0.1 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BT151D FSSeries 12A Standard SCRs Ordering Information BT151 D _ 600 SCRs IT(RMS): 12A 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V D:TO-252AB TO-252AB Package Information www.fuxinsemi.com Page 4 Ver2.1