APM2301CAC-TRG

APM2301CA ® P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A D RDS(ON)= 70mΩ (max.) @ VGS= -4.5V RDS(ON)= 115mΩ (max.) @ VGS= -2.5V RDS(ON)= 250mΩ (max.) @ VGS= -1.8V • • S G Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available ( RoHS Compliant) D Applications • G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device APM2301C Assembly Material Handling Code Temperature Range Package Code APM2301C A : 701XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 1 www.sinopowersemi.com APM2301CA ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID * IDM IS Continuous Drain Current * * TJ TSTG PD RθJA Diode Continuous Forward Current -1.3 Maximum Junction Temperature 150 * A °C -55 to 150 Maximum Power Dissipation RθJC A -12 Storage Temperature Range * V -3 VGS=-4.5V 300µs Pulsed Drain Current Unit TA =25°C 0.83 TA =100°C 0.3 W Thermal Resistance-Junction to Case 75 °C/W Thermal Resistance-Junction to Ambient 150 °C/W Note : *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions APM2301CA Unit Min. Typ. Max. V GS=0V, IDS=250µA -20 - - V DS=-16V, VGS=0V - - -1 - - -30 -0.5 -0.75 -1 V µA Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current TJ=85°C V GS(th) IGSS RDS(ON) VSD a a Gate Threshold Voltage V DS= VGS, IDS=-250µA Gate Leakage Current V GS=±12V, VDS=0V - - ±10 V GS=-4.5V, IDS =-3A - 56 70 Drain-Source On-State Resistance V GS=-2.5V, IDS =-2A - 85 115 V GS=-1.8V, IDS =-1A - 135 250 I SD =-1.3A, VGS=0V - -0.75 -1.3 - 7 10 - 1.9 - - 1.9 - Diode Forward Voltage Gate Charge Characteristics Qg Gate-Source Charge Qgd Gate-Drain Charge µA mΩ V b Total Gate Charge Qgs V Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 V DS=-10V, VGS=-4.5V, I DS=-3A 2 nC www.sinopowersemi.com APM2301CA ® Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions APM2301CA Unit Min. Typ. Max. - 580 - - 100 - - 75 - - 4 7 - 13 23 - 35 63 - 20 36 - 20 - ns - 7 - nC Dynamic Characteristics b Ci ss Input Capacitance C os s Output Capacitance Crss Reverse Transfer Capacitance td(ON ) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Q rr Reverse Recovery Charge V GS=0V, V DS=-10V, Frequency=1.0MHz V DD =-10V, RL =10Ω, I DS=1A, VGEN=-4.5V, R G=6Ω I SD=-3A, dl SD /dt =100A/µs pF ns Note a : Pulse test ; pulse width≤300 µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 3 www.sinopowersemi.com APM2301CA ® Typical Operating Characteristics Power Dissipation Drain Current 1.0 3.5 0.9 3.0 -ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 2.5 2.0 1.5 1.0 0.2 0.5 0.1 o o 0.0 TA=25 C 0 20 40 0.0 60 80 100 120 140 160 TA=25 C,VG=-4.5V 0 20 40 60 TJ- Junction Temperature (°C) TJ - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 50 2 1 it im )L n o s( Rd Normalized Effective Transient 10 -ID - Drain Current (A) 80 100 120 140 160 300µs 1ms 1 10ms 100ms 0.1 1s DC Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 Mounted on 1in pad o RθJA : 150 C/W o TA=25 C 0.01 0.01 0.1 1 10 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com APM2301CA ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 240 VGS= -3,-4, -5, -6, -7, -8, -9, -10V 210 VGS= -1.8V RDS(ON) - On - Resistance (mΩ) 10 -ID - Drain Current (A) -2.5V 8 -2V 6 4 2 -1.5V 180 150 120 90 0.5 1.0 1.5 VGS= -4.5V 60 30 0 0 0.0 VGS= -2.5V 2.0 2.5 3.0 0 2 4 6 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Voltage 90 80 70 60 50 40 12 IDS= -250µA ID= -3A RDS(ON) - On - Resistance (mΩ) 10 -VDS - Drain-Source Voltage (V) 100 30 8 1.4 1.2 1.0 0.8 0.6 0.4 1 2 3 4 5 6 7 8 9 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 0 25 50 75 100 125 150 TJ- Junction Temperature (°C) 5 www.sinopowersemi.com APM2301CA ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 10 2.0 VGS = -4.5V IDS = -3A 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 56mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 4.5 Frequency=1MHz VDS= -10V 4.0 600 -VGS - Gate - Source Voltage (V) 700 C - Capacitance (nC) 0.6 TJ - Junction Temperature (°C) 800 Ciss 500 400 300 200 Coss 100 Crss 0 0.3 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 IDS= -3A 4 8 12 16 20 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 0 6 www.sinopowersemi.com APM2301CA ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01Ω tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 7 www.sinopowersemi.com APM2301CA ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 8 www.sinopowersemi.com APM2301CA ® Package Information D -T- SEATING PLANE < 4 mils e E E1 SEE VIEW A c b 0.25 L GAUGE PLANE SEATING PLANE 0 A1 A A2 e1 VIEW A RECOMMENDED LAND PATTERN SOT-23 S Y M B O L MIN. MAX. MIN. MAX. A - 1.20 - 0.047 A1 0.00 0.08 0.000 0.003 0.044 0.8 INCHES MILLIMETERS A2 0.70 1.12 0.035 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 e 0.95 BSC e1 2.4 0.8 0.037 BSC 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.024 0.012 0° 8° 0.95 UNIT: mm Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 9 www.sinopowersemi.com APM2301CA ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SOT-23 T1 C d 8.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. P0 P1 P2 D0 D1 4.0±0.10 4.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.0 MIN. D W E1 20.2 MIN. 8.0±0.30 1.75±0.10 T A0 B0 F 3.5±0.05 K0 0.6+0.00 3.20±0.20 3.10±0.20 1.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 10 www.sinopowersemi.com APM2301CA ® Taping Direction Information SOT-23 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.13 - August, 2015 11 www.sinopowersemi.com APM2301CA ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness