APM2309AC-TRG

APM2309A ® P-Channel Enhancement Mode MOSFET Features · Pin Description -30V/-2.2A, D RDS(ON)= 105mW(typ.) @ VGS= -10V RDS(ON)= 165mW(typ.) @ VGS= -4.5V · · S G Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Top View of SOT-23-3 D Applications · G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel MOSFET Ordering and Marking Information Package Code A : SOT-23-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device APM2309 Assembly Material Handling Code Temperature Range Package Code APM2309 A : XX - Lot Code 109XX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 1 www.sinopowersemi.com APM2309A ® Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 ID* Continuous Drain Current IDM* Pulsed Drain Current IS * Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation Parameter A -9 -1 A 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 Thermal Resistance-Junction to Ambient Note : *Surface Mounted on 1in2 pad area, t £ 10sec. Symbol V -2.2 VGS=-10V W 150 RqJA* Electrical Characteristics Unit °C/W (TA = 25°C unless otherwise noted) Test Conditions APM2309A Unit Min. Typ. Max. -30 - - - - -1 - - -30 -1.3 -1.8 -2.5 V mA STATIC CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=-250mA VDS=-24V, VGS =0V TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=-250mA Gate Leakage Current VGS=±16V, V DS=0V - - ±10 VGS=-10V, IDS =-2.2A - 105 130 VGS=-4.5V, IDS=-1.7A - 165 220 RDS(ON) a Drain-Source On-State Resistance V mA mW DIODE CHARACTERISTICS VSD a Diode Forward Voltage ISD=-1A, V GS=0V - -0.8 -1.1 V t rr Reverse Recovery Time - 13 - ns Q rr Reverse Recovery Charge ISD=-2.2A, dl SD/dt=100A/ms - 6 - nC Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 2 www.sinopowersemi.com APM2309A ® Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions APM2309A Min. Typ. Max. Unit DYNAMIC CHARACTERISTICS b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 11 - Ciss Input Capacitance - 310 - Cos s Output Capacitance - 40 - C rss Reverse Transfer Capacitance VGS=0V, VDS =-15V, Frequency=1.0MHz - 25 - td(ON) Turn-on Delay Time - 8 15 tr Turn-on Rise Time - 12 23 td(OFF) Turn-off Delay Time - 18 33 - 3 6 - 6.4 9 - 1.4 - - 1.3 - tf VDD=-15V, R L=15W, ID S=-1A, VGEN =-10V, RG =6W Turn-off Fall Time GATE CHARGE CHARACTERISTICS Qg Total Gate Charge Q gs Gate-Source Charge Qgd Gate-Drain Charge W pF ns b VDS =-15V, VGS=-10V, ID S=-2.2A nC Note a : Pulse test ; pulse width £300ms, duty cycle £ 2%. Note b : Guaranteed by design, not subject to production testing. Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 3 www.sinopowersemi.com APM2309A ® Typical Operating Characteristics Power Dissipation Drain Current 1.0 2.4 0.9 2.2 2.0 -ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 0.2 0 20 40 60 1.2 1.0 0.8 0.6 0.0 80 100 120 140 160 o TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 10 R ds (o n) Li m it -ID - Drain Current (A) 1.4 0.2 o TA=25 C 50 300ms 1 1ms 10ms 0.1 100ms DC o 0.01 1.6 0.4 0.1 0.0 1.8 TA=25 C 0.1 1 10 Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 2 Mounted on 1in pad o RqJA : 150 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com APM2309A ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 9 8 240 -4.5V 220 RDS(ON) - On - Resistance (mW) VGS=-5,-6,-7,-8,-9,-10V -ID - Drain Current (A) 7 6 -4V 5 4 -3.5V 3 2 -3V 1 0 0.0 1.0 1.5 2.0 2.5 140 120 VGS= -10V 100 80 3.0 0 1 2 3 4 5 6 7 8 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 9 1.6 ID=-2.2A IDS= -250mA 220 1.4 Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 160 -VDS - Drain - Source Voltage (V) 240 200 180 160 140 120 1.2 1.0 0.8 0.6 0.4 0.2 100 80 180 60 0.5 VGS= -4.5V 200 2 3 4 5 6 7 8 9 0.0 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com APM2309A ® Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.0 1.8 IDS = -2.2A 1.6 1.4 -IS - Source Current (A) Normalized On Resistance 10 VGS = -10V 1.2 1.0 0.8 0.6 0.4 o Tj=150 C o Tj=25 C 1 0.2 o 0.0 -50 -25 RON@Tj=25 C: 105mW 0 25 50 75 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 125 150 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance 450 Gate Charge 10 Frequency=1MHz -VGS - Gate - source Voltage (V) C - Capacitance (pF) 350 Ciss 300 250 200 150 100 Coss 50 0 VDS= -10V 9 400 Crss 0 8 7 6 5 4 3 2 1 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 IDS= -2.2A 6 www.sinopowersemi.com APM2309A ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01W tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT RG td(off) tf VGS 10% VGS VDD tp 90% VDS Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 7 www.sinopowersemi.com APM2309A ® Package Information SOT-23-3 D -T- SEATING PLANE < 4 mils e E E1 SEE VIEW A c b 0.25 L GAUGE PLANE SEATING PLANE 0 A1 A A2 e1 VIEW A RECOMMENDED LAND PATTERN SOT-23-3 S Y M B O L MIN. MAX. MIN. MAX. A - 1.20 - 0.047 A1 0.00 0.08 0.000 0.003 A2 0.90 1.12 0.035 0.044 b 0.30 0.50 0.012 0.020 c 0.08 0.22 0.003 0.009 D 2.70 3.10 0.106 0.122 E 2.60 3.00 0.102 0.118 E1 1.40 1.80 0.055 0.071 MILLIMETERS e 0.95 BSC e1 0.8 INCHES 2.4 0.8 0.037 BSC 1.90 BSC 0.075 BSC L 0.30 0.60 0 0° 8° 0.012 0.024 0° 8° 0.95 UNIT: mm Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 8 www.sinopowersemi.com APM2309A ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 B A OD1 B T SECTION A-A SECTION B-B H A d T1 Application A H 178.0±2.00 50 MIN. SOT-23-3 P0 4.0±0.10 P1 4.0±0.10 T1 C 8.4+2.00 13.0+0.50 -0.00 -0.20 P2 D0 2.0±0.05 1.5+0.10 -0.00 d D 1.5 MIN. 20.2 MIN. D1 1.0 MIN. T W E1 8.0±0.30 1.75±0.10 A0 B0 F 3.5±0.05 K0 0.6+0.00 -0.40 3.20±0.20 3.10±0.20 1.50±0.20 (mm) Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 9 www.sinopowersemi.com APM2309A ® Taping Direction Informatiom SOT-23-3 USER DIRECTION OF FEED Classification Profile Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - April, 2014 10 www.sinopowersemi.com APM2309A ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness