ASD265D

ASD265D 650V,2A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics 650 V IF, Tc≤160℃ 2 A QC 8 nC VRRM Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type ASD265D TO-252-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Marking ASD265D Document ID Issued Date AS-3240003 2018/09/10 Revised Date / Revision Page A 5 650V,2A Silicon Carbide Schottky Diode ASD265D Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 9 6 2 V 15 A 30 A 42 18 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=100℃ TC=160℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 3.57 ℃/W Document ID Issued Date AS-3240003 2018/09/10 Revised Date / Revision Page A 5 650V,2A Silicon Carbide Schottky Diode ASD265D Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Test Conditions IF=2A, Tj=25℃ IF=2A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ VR=400V, Tj=150℃ 8 - VR=0V, Tj=25℃, f=1MHZ 123 150 VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ 12 13 20 30 VR Qc   0 Total Capacitance C Numerical Typ. Max. 1.38 1.7 1.72 2.5 10 50 20 100 C (V )dV Unit V µA nC pF Performance Graphs 2) Reverse IV characteristics as a function of Tj : 1) Forward IV characteristics as a function of Tj : http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 3 Document ID Issued Date AS-3240003 2018/09/10 Revised Date / Revision Page A 5 ASD265D 650V,2A Silicon Carbide Schottky Diode 3)Current Derating 4)Capacitance vs. reverse voltage : Package TO-252-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240003 2018/09/10 Revised Date / Revision Page A 5 ASD265D 650V,2A Silicon Carbide Schottky Diode DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240003 2018/09/10 Revised Date / Revision Page A 5