ASD10120D

ASD10120D 1200V,10A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 1200 V IF, Tc≤150℃ 10 A QC 69 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type Marking ASD10120D TO-252-2 ASD10120D http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Document ID Issued Date AS-3240021 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120D Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 1200 V VRSM 1200 V VDC 1200 25.9 12.5 10 V 60 A 140 A 141.5 62 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=135℃ TC=150℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Storage Temperature Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 1.06 ℃/W Document ID Issued Date AS-3240021 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120D Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Test Conditions IF=10A, Tj=25℃ IF=10A, Tj=175℃ VR=1200V, Tj=25℃ VR=1200V, Tj=175℃ VR=800V, Tj=150℃ 69 - 770 790 VR=400V, Tj=25℃, f=1MHZ 52 54 VR=800V, Tj=25℃, f=1MHZ 50 51 VR Qc   0 C(V )dV VR=0V, Tj=25℃, f=1MHZ Total Capacitance C Numerical Typ. Max. 1.63 1.7 2.55 3 10 50 20 100 Unit V µA nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 2) Reverse IV characteristics as a function of Tj : 3 Document ID Issued Date AS-3240021 2018/09/10 Revised Date / Revision Page A 5 ASD10120C 1200V,10A Silicon Carbide Schottky Diode 3) Current Derating 4) Capacitance vs. reverse voltage : Package TO-252-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240021 2018/09/10 Revised Date / Revision Page A 5 1200V,10A Silicon Carbide Schottky Diode ASD10120C DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240021 2018/09/10 Revised Date / Revision Page A 5