ASD665A

ASD665A 650V,6A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM IF, Tc≤155℃ QC 650 V 6 A 23 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type ASD665A TO-220-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Marking ASD665A Document ID Issued Date AS-3240005 2018/09/10 Revised Date / Revision Page A 5 ASD665A 650V,6A Silicon Carbide Schottky Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 19 9 6 V 50 A 73 A 92 43 W W Continuous Forward Current IF Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IFRM IFSM Test Condition TC=25℃ TC=135℃ TC=155℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 1.38 ℃/W Document ID Issued Date AS-3240005 2018/09/10 Revised Date / Revision Page A 5 ASD665A 650V,6A Silicon Carbide Schottky Diode Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC IF=6A, Tj=25℃ IF=6A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ VR=400V, Tj=150℃ 23 - VR=0V, Tj=25℃, f=1MHZ 379 423 VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ 40 32 43 34 VR Qc   0 C Total Capacitance Numerical Typ. Max. 1.4 1.65 1.7 2.0 10 50 20 100 Test Conditions C(V )dV Unit V µA nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 50 12 O Tj=25 C 10 O Tj=75 C 40 o Tj=25 C O Tj=125 C 8 o 30 IR (A) IF (A) Tj=75 C O Tj=175 C 6 o Tj=125 C o Tj=175 C 20 4 10 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 VF (V) 600 800 1000 Figure 2. Reverse Characteristics Figure 1.Forward Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 VR (V) 3 Document ID Issued Date AS-3240005 2018/09/10 Revised Date / Revision Page A 5 650V,6A Silicon Carbide Schottky Diode ASD665A 3) Current Derating 4)Capacitance vs. reverse voltage : 480 90 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 80 70 60 400 320 C (pF) IF(peak) (A) 50 40 30 240 160 20 10 80 0 25 50 75 100 125 150 175 0 TC ( °C ) 0.1 1 VR (V) 10 100 1000 Figure 4.Capacitance vs. Reverse Voltage Figure 3. Current Derating Package TO-220-2 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240005 2018/09/10 Revised Date / Revision Page A 5 ASCD665A 650V,6A Silicon Carbide Schottky Diode DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2018 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date AS-3240005 2018/09/10 Revised Date / Revision Page A 5