DHE1M

DHE1A THRU DHE1M 1.0A Surface Mount High Effciency Rectifiers-50-1000V Package outline Features Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Compliant to RoHS Directive 2011/65/EU Compliant to Halogen-free SOD-123 1.1± 0.25 0.10-0.30 1.8± 0.2 １．０±0.2 Cathode Band Top View 0.6±0.25 Mechanical data Case : JEDEC SOD-123 molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.0007 ounce, 0.02 grams 3.7±0.2 Dimensions in millimeters Maximum ratings and Electrical Characteristics (AT PARAMETER T A=25 oC unless otherwise noted) CONDITIONS Symbol MIN. TYP. MAX. UNIT Forward rectified current See Fig.2 IO 1.0 A Forward surge current 8.3ms single half sine-wave (JEDEC methode) I FSM 25 A V R = V RRM T A = 25 OC Reverse current V R = V RRM T A = 100 C Thermal resistance Junction to ambient NOTE 1 Diode junction capacitance f=1MHz and applied 4V DC reverse voltage Storage temperature V RMS*2 (V) *3 VR (V) DHE1A 50 35 50 DHE1B 100 70 100 DHE1D 200 140 200 DHE1G 400 280 400 DHE1J 600 420 600 DHE1K 800 560 800 DHE1M 1000 700 1000 *4 VF (V) *5 t rr (ns) Operating temperature T J, ( OC) μA 50 R θJA 180 CJ 20 T STG *1 V RRM (V) SYMBOLS 5.0 IR O O pF +150 -65 C/W O C *1 Repetitive peak reverse voltage *2 RMS voltage 1.00 50 *3 Continuous reverse voltage 1.40 -55 to +150 *4 Maximum forward voltage@I F=1.0A 1.70 75 *5 Maximum Reverse recovery time, note 2 Note: 1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas 2. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3030002 2003/03/08 2012/05/16 D 3 DHE1A THRU DHE1M 1.0A Surface Mount High Effciency Rectifiers-50-1000V Rating and characteristic curves (DHE1A THRU DHE1M ) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1-TYPICAL FORWARD CHARACTERISTICS H E1 M E1 A~ D J~ D E1 D H DH E1 G 1.0 DH .1 1.2 1.0 0.8 0.6 0.4 0.2 0 0 P.C.B. Mounted on 0.2" x 0.2" (5 mm x 5 mm) Copper Pad Areas 25 50 75 100 125 150 175 LEAD TEMPERATURE (°C) TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PEAK FORWAARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE GENERATOR (NOTE 2) ( ) 50 40 30 8.3ms Single Half TJ=25 C 1W NONINDUCTIVE Sine Wave 20 JEDEC method 10 0 1 5 50 10 100 NUMBER OF CYCLES AT 60Hz (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. FIG.5-TYPICAL JUNCTION CAPACITANCE 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 140 trr JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) HE 1D AVERAGE FORWARD CURRENT,(A) 10 | | | | | | | | +0.5A 0 -0.25A -1.0A 120 100 80 60 40 20 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3030002 2003/03/08 2012/05/16 D 3 DHE1A THRU DHE1M 1.0A Surface Mount High Effciency Rectifiers-50-1000V Pinning information Pin Pin1 Pin2 Simplified outline cathode anode 1 Symbol 2 1 2 Marking Type number Marking code DHE1A DHE1B DHE1D DHE1G DHE1J DHE1K DHE1M U1A U1B U1D U1G U1J U1K U1M Suggested solder pad layout C A B Dimensions in inches and (millimeters) PACKAGE A B C SOD-123 0.075 (1.90) 0.055 (1.40) 0.075 (1.90) http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3030002 2003/03/08 2012/05/16 D 3