ASD465F

ASD465F 650V,4A Silicon Carbide Schottky Diode Features • Ease of Paralleling • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Key Characteristics VRRM IF, Tc=141℃ QC 650 V 4 A 9 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements K A Applications • Switch Mode Power Supplies (SMPS) • Boost diodes in PFC or DC/DC stages • Motor drives • Solar application,UPS • Power Switching Circuits Part No. Package Type Marking ASD465F TO-220-2F ASD465F http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 1 Document ID Issued Date AS-3240029 2019/09/10 Revised Date / Revision Page A 5 ASD465F 650V,4A Silicon Carbide Schottky Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM 650 V VRSM 650 V VDC 650 11 4.9 4 V 21 A 33 A 50 22 W W Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current IF IFRM IFSM Test Condition TC=25℃ TC=135℃ TC=141℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A Power Dissipation PTOT Operating Junction Tj -55℃ to 175℃ ℃ Tstg -55℃ to 175℃ ℃ 1 8.8 Nm lbf-in Storage Temperature M3 Screw 6-32 Screw Mounting Torque Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Test Condition 2 Value Typ. Unit 4.7 ℃/W Document ID Issued Date AS-3240029 2019/09/10 Revised Date / Revision Page A 5 ASD465F 650V,4A Silicon Carbide Schottky Diode Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC IF=4A, Tj=25℃ I F=4A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ VR=400V, Tj=25℃ VR Qc   0 C Total Capacitance Numerical Typ. Max. 1.4 1.65 2.3 1.7 1 10 2 50 Test Conditions 9 C(V )dV Unit V µA - VR=0V, Tj=25℃, f=1MHZ 230 260 VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ 24 20 26 21 nC pF Performance Graphs 2) Reverse IV characteristics as a function of Tj : IF (A) IR (μA) 1) Forward IV characteristics as a function of Tj : VF (V) VR (V) Figure 1. Forward Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Figure 2. Reverse Characteristics 3 Document ID Issued Date AS-3240029 2019/09/10 Revised Date / Revision Page A 5 ASD465F 650V,4A Silicon Carbide Schottky Diode 3)Current Derating 4)Capacitance vs. reverse voltage : 40 DC Duty=70% Duty=50% 30 Duty=30% Duty=10% C (pF) IF(peak) (A) Duty=20% 20 10 0 0 25 50 75 100 125 150 175 Tc (°C) VR (V) Figure 4. Capacitance vs. Reverse Voltage Figure 3. Current Derating Package TO-220-2F http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 4 Document ID Issued Date AS-3240029 2019/09/10 Revised Date / Revision Page A 5 ASD465F 650V,4A Silicon Carbide Schottky Diode DISCLAIMER ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABITILY, FUNCTION OR DESIGN OR OTHERWISE. Copyright ©2019 Anbon Semiconductor Company Ltd. All rights reserved. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 5 Document ID Issued Date as-3240029 2019/09/10 Revised Date / Revision Page A 5