AS2312

AS231 2 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 2. SOURCE 3. DRAIN MARKING: A1 2 Maximum ratings (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位 Drain-Source Voltage 漏極-源極電壓 BVDSS 20 V Gate- Source Voltage 栅極-源極電壓 VGS +8 V Drain Current (continuous) 漏極電流-連續 ID 5 A Drain Current (pulsed) 漏極電流-脉冲 IDM 18 A Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ PD 1250 mW Junction 結溫 TJ 150 ℃ Storage Temperature 儲存溫度 Tstg -55to+150 ℃ http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150041 2003/03/08 2012/05/16 D 3 AS231 2 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Electrical characteristics (Ta=25℃ unless otherwise noted) Characteristic 特性參數 Symbol 符號 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID = 250uA,VGS=0V) BVDSS 20 — — V Gate Threshold Voltage 栅極開启電壓(ID =250uA,VGS= VDS) VGS(th) 0.45 — 1.2 V Diode Forward Voltage Drop 内附二極管正向壓降(IS=0.75A,VGS=0V) VSD — — 1.5 V Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 16V) (VGS=0V, VDS= 16V, TA=55℃) IDSS — — 1 10 uA Gate Body Leakage 栅極漏電流(VGS=+8V, VDS=0V) IGSS — — +100 nA Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 5A,VGS= 4.5V) RDS(ON) — 23 25 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 2A,VGS= 2.5V) RDS(ON) — 32 35 mΩ Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 1A,VGS= 1.8V) RDS(ON) — 45 50 mΩ Input Capacitance 輸入電容 (VGS=0V, VDS= 10V,f=1MHz) CISS — 650 — pF Output Capacitance 輸出電容 (VGS=0V, VDS= 10V,f=1MHz) COSS — 120 — pF Turn-ON Time 开启時間 (VDS= 10V, ID= 3A, RGEN=6Ω) t(on) — 20 — ns Turn-OFF Time 关断時間 (VDS= 10V, ID= 3A, RGEN=6Ω) t(off) — 60 — ns Pulse Width